Abstract

A GaAIAs/GaAs surface emitting (SE) laser which can be produced by planar technology is attractive in view of the increasing demands of short-wavelength applications such as short-wavelength optical communications and laser disks. We earlier reported room-temperature pulsed oscillation of a GaAIAs/GaAs SE laser with a threshold of 310-400 mA where we used an Au-coated mirror for the front mirror.^1,2 We report fabrication and lasing characteristics of a GaAIAs/GaAs SE laser using a dielectric multilayer Bragg reflector to increase the reflectivity and reduce the threshold.

© 1986 Optical Society of America