Abstract
As the data rate of optical telecommunication systems accelerates beyond several gigabits per second, optoelectronic integrated circuits (OEICs) becomes indispensable. The integration of an optical device with an electronic circuit can improve the performance of a system owing to the reduction of parasitics, which are inevitable in hybrid circuits and adversely affect the performance, particularly at high frequencies. In the past several years gigabit-per-second operations of receiver OEICs have been achieved by using new structures and technologies such as GaAs on InP heteroepitaxy,1 pin-junction field effect transistor (JFET) integration,2 metal-semiconductor-metal (MSM) high-electron-mobility transistor (HEMT) integration,3 pin-heterojunction bipolar transistor (HBT) integration,4 and pin-HEMT integration.5 They have exhibited 1.2-2.4-Gb/s operations, and further improvement of the speed can be expected by refining circuit configurations and/or by improving device performance. Among the technologies mentioned above, HEMT integration is considered the most promising approach because of the great potential of AlInAs/GaInAs HEMTs. We have been developing receiver OEICs consisting of GaInAs pin photodiodes (PDs) and AlInAs/GaInAs HEMTs grown by organometallic vapor-phase epitaxy (OMVPE).5 We report here an ultra-high-speed performance of pin-HEMT receiver OEICs, in which a transimpedance circuit configuration is used.
© 1991 Optical Society of America
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