Abstract

An avalanche photodiode with high quantum efficiency in the 1.0-1.3 μm wavelength range will be an important component of IOCs to be used in this low loss, low dispersion regime of optical fiber transmission. In this paper we report for the first time the successful fabrication of avalanche photodiodes in the quaternary alloy GaInAsP, grown epitaxially on InP substrates. Uniform gains of 12, a rise time of 200 psec and low-bias quantum efficiencies in excess of 40% have been measured at 1.15 μm.

© 1978 Optical Society of America