Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • European Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper QME3

Strong dephasing in a laser excited semiconductor due to carrier-plasmon scattering

Not Accessible

Your library or personal account may give you access

Abstract

The excitation of an electron-hole plasma with an ultrashort intense laser pulse is characterized by a sensitive interplay between the generation of the coherent interband polarization, its decay and the generation of nonequilibrium carrier distributions and their relaxation. For sub-picosecond pulses the microscopic processes during the excitation are controlled by the carrier screening. The screened interaction of a single carrier with the surrounding e-h plasma can be understood as a scattering process with the excited plasmons. These microscopic scattering processes are responsible for the dephasing of polarization as well as for the carrier relaxation. In this sense they fix the intrinsic time scale of the excitation.

© 1996 IEEE

PDF Article
More Like This
Optical dephasing and carrier–carrier scattering in semiconductor laser media

D. Scott, R. Binder, K. Henneberger, and S. W. Koch
CWG57 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992

Dephasing of Bloch oscillations due to carrier-carrier scattering: coherent versus Incoherent scatterers

F. Wolter, R. Martini, S. Tolk, H.T. Grahn, R. Hey, P. Haring Bolivar, and H. Kurz
QTuG5 International Quantum Electronics Conference (IQEC) 1998

Ultrafast optical dephasing due to unscreened Coulomb scattering in semiconductors

Hai-Chao Zhang and Wei-Zhu Lin
PA42 International Conference on Quantum Information (QIM) 2001

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.