Abstract

Semiconductor lasers operating in the UV-C band (100-280 nm) are important for a broad range of applications including surface treatment, bio-agent detection and the production of microelectronics and integrated circuits. To date, however, it has remained challenging to achieve electrically injected AlGaN quantum well lasers operating in these wavelengths, due to the presence of large densities of dislocations and the inefficient p-type conduction. In this context, we have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization Al-rich AlGaN nanowire heterostructures on Si substrate. We have demonstrated electrically injected AlGaN nanowire lasers at ~239 nm, with a very small threshold current of 0.3 mA at room temperature.

© 2017 IEEE