Abstract

Mid infrared (MIR) semiconductor lasers (λ = 4 – 15 μm) can find a wide applications in different fields. Two types of such lasers based on intersubband transitions of carriers in quantum well (QW) structures have been already realized. These are quantum cascade lasers (QCL) [1] and fountain lasers with optical pumping [2]. However, production technology of QCL is complicated, and FL use is restricted. Two new types of MIR intersubband lasers are suggested in this paper. These lasers have both the simplicity of design and technology (growth) and convenient in practice. Inversion of population appears due to current injection or under interband optical pumping by compact semiconductor laser.

© 2000 IEEE