Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CThA4

The effect of Auger generated hot-holes on 1.5-μm lnGaAs(P)-based quantum well semiconductor lasers

Not Accessible

Your library or personal account may give you access

Abstract

1.5-m semiconductor lasers are essential for optical telecommunications.

© 2000 Optical Society of America

PDF Article
More Like This
Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers

S.J. Sweeney, A.F. Phillips, A.R. Adams, E.P. O’Reilly, M. Silver, and P.J.A. Thijs
CWN4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

Auger recombination heating and hot phonon effect in semiconductor optical amplifiers

J.-N. Fehr, T.P. Hessler, D. Marti, P.E. Selbmann, M.-A. Dupertuis, B. Deveaud, J.-Y. Emery, and B. Dagens
CWF64 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2000

High-power 1.52-μm AlGaInAs strained multi-quantum well lasers

T. C. Newell, P. M. Varangis, E. Pease, A. Stintz, G. T. Liu, K. J. Malloy, and L. F. Lester
CWF97 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2000

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.