Abstract
Recently, we have proposed a novel technique for patterning semiconductor heterostructures in the substrate plane [1, 2]. This patterning technique utilizes the lateral thickness variations exhibited by quantum wells (QWs) grown on nonplanar substrates. These thickness variations give rise to lateral variations in the effective bandgap due to the strong dependence of the confinement energy on the QW thickness. In the present work we describe the fabrication and the characteristics of patterned quantum well (PQW) semiconductor lasers that rely OB this patterning technique.
© 1988 Optical Society of America
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