Add to BibSonomyAbstract
Few investigations on carrier density and temperature distribution of semiconductor optical amplifiers (SOA) have been performed despite their importance for gain and recovery times. We study the dependencies of these quantities on various parameters such as applied current, injected optical signal power, and active layer geometry. To get information on both density and temperature of the carriers, we performed spontaneous emission (SE) measurements.
© 2000 IEEE
PDF ArticleMore Like This
J.-N. Fehr, T.P. Hessler, P.E. Selbmann, M.-A. Dupertuis, B. Deveaud, J.-Y. Emery, E. Dorgeuille, E. Pommereau, and B. Dagens
CThG4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000
B. Deveaud, J. N. Fehr, M. A Dupertuis, Th Hessler, L. Kappei, D. Marti, B. Dagens, and J. Y. Emery
CMB5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001
J.-N. Fehr, J.L. Pleumeekers, T.P. Hessler, P.E. Selbmann, M.-A. Dupertuis, B. Deveaud, J.-Y. Emery, F. Dorgeuille, F. Pommereau, and B. Dagens
ThD13 Optical Amplifiers and Their Applications (OAA) 1999