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Conferences > CLEO_Europe > 1998 > CTuI > CTuI40

Asymmetric, low confinement GaAs/AlGaAs DQW laser diode with optical trap layer for high power operation

M. Buda, W. C. van der Vleuten, Gh. Iordache, G. A. Acket, T. G. van de Roer, C. M. van Es, B. H. van Roy, and E. Smalbrugge

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Abstract

This paper reports on low confinement (Γ= 7.5 x 10-3/well), DQW 2 x 8 nm asymmetric laser diode structure designed for high power operation [1]. The low value of Γ is achieved by adding an optical trap layer at one side of the QW’s. A significant part of the optical field is trapped in the n-type Al0.20Ga0.80As optical trap layer with a thickness cf about 0.2 μm, as shown in fig. 1.

© 1998 IEEE

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