Abstract

In application of RW laser diodes with monomode emission, like pumping sources for fibre amplifiers in optical communication systems, very high output powers are desirable. During the last years, remarkable success has been achieved to stabilize the facets of InGaAs/AlGaAs diodes, with emission wavelengths of about 1 μm, what allowed the production of highly reliable lasers. But along with these efforts, a lot of work has been done for further enhancement of device stability by replacing AlGaAs with Al-free materials. We show here, that the “pure" AlGaAs structures itself allows best performance at output powers of 300 mW.

© 1998 IEEE