Abstract

Considerable progress in high-power diffraction-limited sources has been made owing to the use of flared semiconductor laser amplifiers. The broadening of the gain electrode along the length of the amplifier allows the wave spreading while maintaining its amplification level, and reduces the beam filamentation phenomenon. Diffraction-limited powers as high as 1 W CW have been demonstrated from such devices, however thermal effects can strongly influence their performance.

© 1998 IEEE