Abstract
Flared semiconductor lasers and amplifiers can produce diffraction-limited powers in the multi-watt level. The success of these lasers is achieved by overcoming the beam-degrading effects of filamentation and by controlling factors such as the overall gain level, antiguiding, and inhomogeneities in the lasing medium. These effects are examined using beam propagation modeling and compared to experimental measurements on flared gain element devices.
© 1994 Optical Society of America
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