Carrier capture and escape times in ln0.35Ga0.65As/GaAs multiple quantum well lasers determined from high-frequency impedance and modulation response measurements

I. Esquivias; I. Esquivias; S. Weisser; P. J. Tasker; J. D. Ralston; J. Rosenzweig; B. Romero; B. Romero

doi:10.1364/CLEO_EUROPE.1994.CFJ5

1994 Conference on Lasers and Electro-Optics Europe
Technical Digest Series (Optica Publishing Group, 1994),
paper CFJ5
•https://doi.org/10.1364/CLEO_EUROPE.1994.CFJ5

Carrier capture and escape times in ln_0.35Ga_0.65As/GaAs multiple quantum well lasers determined from high-frequency impedance and modulation response measurements

I. Esquivias, S. Weisser, P. J. Tasker, J. D. Ralston, J. Rosenzweig, and B. Romero

The European Conference on Lasers and Electro-Optics 1994

Amsterdam Netherlands
28 August–2 September 1994
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Microcavity Effects and Carrier Dynamics (CFJ)

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I. Esquivias, S. Weisser, P. J. Tasker, J. D. Ralston, J. Rosenzweig, and B. Romero, "Carrier capture and escape times in ln0.35Ga0.65As/GaAs multiple quantum well lasers determined from high-frequency impedance and modulation response measurements," in 1994 Conference on Lasers and Electro-Optics Europe, Technical Digest Series (Optica Publishing Group, 1994), paper CFJ5.

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Abstract

Although several models have been proposed to account for the influence of carrier transport, capture, and re-emission on the high-speed properties of multiple quantum well (MQW) lasers,^1,2 very little experimental work has been carried out to directly determine the effective capture time into the QW's, τ_cap and the escape time out of the QW's, τ_esc. In the present work we utilize for the first time high-frequency impedance and modulation response measurements³ to evaluate τ_cap and τ_esc for In_0.35Ga_0.65As/GaAs MQW lasers with record 30 GHz modulation bandwidth.⁴

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