Abstract
The nonthermal occupation of higher subbands in superlattices by sequential resonant tunneling can give rise to new light emitting devices in the far-infrared spectral region, e.g., by using optical intersubband transitions. In contrast to luminescence spectroscopy,1 where a homogeneously distributed electron-hole plasma is generated optically, in possible device applications the electrons and holes are injected by ohmic contacts and occupy states according to their vertical transport properties.2 Therefore, we have studied the occupation of higher subbands by resonant tunneling in undoped GaAs/AlAs-superlattices (21-nm GaAs, 2.2-nm AlAs, 40 periods) via electroluminescence (EL) spectroscopy at T = 5 K.
© 1994 IEEE
PDF ArticleMore Like This
R. Klann, D. Bertram, H.T. Grahn, K.v. Klitzing, and K. Eberl
QTuI5 European Quantum Electronics Conference (EQEC) 1996
K. Fujiwara, N. Tsukada, T. Nakayama, A. Nakamura, and T. Nishino
WL5 International Quantum Electronics Conference (IQEC) 1988
Le Zhao, Liang Gao, John L. Reno, and Sushil Kumar
AM5A.21 Advanced Solid State Lasers (ASSL) 2016