Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper CME1

High-speed measurement of a GaAs/Al0.2Ga0.8As quantum well infrared detector

Not Accessible

Your library or personal account may give you access

Abstract

Photodetectors for the mid-infrared range (6–14 μm), based on III—V semiconductors, present several advantages compared to other materials used for infrared detection, such as II–VI semiconductors.1–3 The crystal growth and processing technologies of III–V materials are in a highly developed stage.4 Therefore, it is possible to accurately control some important parameters for this type of device, such as the band gap, the separation between the levels in the well, the operating temperature, and the speed. The good uniformity and reproducibility of III–V infrared detector manufacturing also allows monolithic integration of these devices.4

© 1994 Optical Society of America

PDF Article
More Like This
Lasing al ~1 μm from In0.2Ga0.8As/GaAs quantum well surface-emitting resenators with GaAs/AlAs mirrors

K. TAI, K. F. HUANG, J. L. JEWELL, R J. FISCHER, S. L. McCALL, and A. Y. CHO
FC5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Carrier capture and escape times in ln0.35Ga0.65As/GaAs multiple quantum well lasers determined from high-frequency impedance and modulation response measurements

I. Esquivias, S. Weisser, P. J. Tasker, J. D. Ralston, J. Rosenzweig, and B. Romero
CFJ5 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1994

Normal-incidence absorption in p-type ln0.5Ga0.5As/Al0.45Ga0.55As quantum wells

Bartev J. Vartanian and James S. Harris
QWC67 International Quantum Electronics Conference (IQEC) 1994

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved