Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEOPR > 2022 > CMP11A > CMP11A_03

Temperature Dependence of Mid-infrared Emission Process of InAs/GaSb Superlattices Grown by MOVPE

Masakazu Arai, Koji Maeda, Yuto Iwakiri, and Takeshi Fujisawa

Not Accessible

Your library or personal account may give you access

Abstract

The mid-infrared emission of InAs/GaSb superlattices grown by MOVPE was compared with the calculated spectrum by perturbation method. Above 90 K, the emission from higher energy transitions is larger than those from the lowest levels.

© 2022 IEEE

PDF Article
More Like This
Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate

Jian Huang, Daqian Guo, Zhuo Deng, Huiyun Liu, Jiang Wu, and Baile Chen
S4J.6 Asia Communications and Photonics Conference (ACP) 2018

Mid-IR Photoluminescence Measurement of InAs/GaSb Type II Superlattices

Hong Cai, Sheng Liu, Liwei Cheng, Elaine Lalanne, Fow-Sen Choa, and Anthony Johnson
FTuK6 Frontiers in Optics (FiO) 2011

Dual-Color InAs/GaSb Superlattice Infrared Imagers

Robert Rehm, Martin Walther, Frank Rutz, Johannes Schmitz, Wolfgang Luppold, Matthias Wauro, Jasmin Niemasz, Andreas Wörl, Jan-Michael Masur, Lutz Kirste, Ralf Scheibner, and Johann Ziegler
C592 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2011

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use