Abstract
GaInSb/InAs superlattices are attractive candidate active layers in mid-wave infrared (MWIR) lasers. The unusual broken gap band alignment in this system allows considerable freedom to tailor the electronic band structure of the conduction and valence bands, making possible appreciable reductions in Auger recombination and intersubband absorption loss mechanisms. In-plane dispersion of the valence band is well matched to that of the conduction band, reducing calculated threshold current densities. Further, both electrons and holes are readily confined in such an active layer for arbitrarily long emission wavelengths, owing to the comparatively high energies of the band edges relative to those of competing approaches.
© 1996 Optical Society of America
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