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Conferences > ACPC > 2018 > S4J > S4J.6
  • Asia Communications and Photonics Conference (ACP) 2018
  • OSA Technical Digest (Optica Publishing Group, 2018),
  • paper S4J.6

Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate

Jian Huang, Daqian Guo, Zhuo Deng, Huiyun Liu, Jiang Wu, and Baile Chen

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Abstract

We present a GaAs based PiBN InAs/GaSb type II superlattice photodetector for mid infrared application with peak responsivity of 0.52A/W at 3.2um at 77K under 0V.

© 2018 The Author(s)

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