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  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper ThP_027

Photoluminescence from Er-doped ITO films

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Abstract

Erbium was successfully incorporated into indium tin oxide films through the sol-gel technique. Strong 1.5 µm emission from Er3+ ions with a favorable 4I13/2 state lifetime was observed for the Er-doped ITO films thus prepared. Our Er-doped ITO films may promise some potential for practical applications.

© 2007 IEEE

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