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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper CThK38

Near IR and visible photoluminescence from Er doped III-nitride semiconductors

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Abstract

Rare earth doped semiconductors have been studies for more than a decade because of the possibility to develop compact and efficient electroluminescence devices.1,2

© 1999 Optical Society of America

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