Abstract

We report ion-implanted Er ions into Ge11.5As24Se64.5 thin films with different doses, and subsequently thermal-annealed the films with different times. The characterization results indicated that the thickness, refractive index and optical bandgap of the films can be stabilized with 3 hour thermal annealing. The 1.5 μm emission arising from the 4I13/24I15/2 transition was observed and a lifetime of 1.35 ms was obtained in films annealed at 180°C.

© 2011 AOS

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