Photoluminescence in Er-doped Ge-As-Se Chalcogenide Thin Films

Kunlun Yan; Rongping Wang; Khu Vu; Robert Elliman; Kidane Belay; Barry Luther-Davies

Proceedings of the International Quantum Electronics Conference and Conference on Lasers and Electro-Optics Pacific Rim 2011
(Optica Publishing Group, 2011),
paper C614

Photoluminescence in Er-doped Ge-As-Se Chalcogenide Thin Films

Kunlun Yan, Rongping Wang, Khu Vu, Robert Elliman, Kidane Belay, and Barry Luther-Davies

Conference on Lasers and Electro-Optics/Pacific Rim 2011

Sydney Australia
28 August–1 September 2011
ISBN: 978-0-9775657-7-1

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K. Yan, R. Wang, K. Vu, R. Elliman, K. Belay, and B. Luther-Davies, "Photoluminescence in Er-doped Ge-As-Se Chalcogenide Thin Films," in Proceedings of the International Quantum Electronics Conference and Conference on Lasers and Electro-Optics Pacific Rim 2011, (Optica Publishing Group, 2011), paper C614.

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Abstract

We report ion-implanted Er ions into Ge_11.5As₂₄Se_64.5 thin films with different doses, and subsequently thermal-annealed the films with different times. The characterization results indicated that the thickness, refractive index and optical bandgap of the films can be stabilized with 3 hour thermal annealing. The 1.5 μm emission arising from the ⁴I_13/2→⁴I_15/2 transition was observed and a lifetime of 1.35 ms was obtained in films annealed at 180°C.

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