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Conferences > CLEOPR > 1995 > WP > WP3
  • The Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 1995),
  • paper WP3

Optical properties of an optically-controlled metal-oxide-semiconductor field-effect transistor

Yukio Shimizu, Masaaki Suzuki, Kenji Funamoto, and Kazuhiko Shimomura

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Abstract

Optical properties of an optically-controlled MOSFET using Si substrate has been demonstrated at 1.55 μm wavelength light. The current of MOSFET is modulated by the electric-field induced by photo-generated carriers in the absorption region whose structure is consisted of the p-i-n diode.1-3 This device is possible of high speed operation compared to direct optical control FET4 using photo-generated carriers in the channel as a modulation current.

© 1995 IEEE

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