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Conferences > UEO > 1995 > UTUE > UTUE10

Ultrafast characterisation of parasitics in in-plane-gate field-effect transistors

K. Ogawa, J. Allam, J.J. Baumberg, N. de B. Baynes, J.R.A. Cleaver, T. Mishima, and I. Ohbu

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Abstract

The in-plane-gate field-effect transistor (IPGFET) with gate-channel isolation by mesa trench exhibits very small gate-channel capacitance1 due to the planar geometry. In this paper the parasitic capacitance is measured using electro-optic sampling2 of the displacement current induced on the drain.

© 1995 Optical Society of America

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