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Conferences > CLEO > 1995 > CWD > CWD6
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CWD6

New type of optically controlled FET operating at 1.55 μm

Kenji Funamoto, Yukio Shlmlzu, and Kazuhiko Shimomura

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Abstract

A new type of optically controlled GaAs FET operating at 1.55 μm has been demonstrated. The current of the FET is modulated by the electric field induced by the photogenerated carriers in the p-i-n GalnAs/InP absorption region.1,2 This device makes possible a speed of operation that is higher than that obtainable with a direct-optical-control FET3 using photo-generated carriers in the channel as a modulation current.

© 1995 Optical Society of America

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