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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper THK21

Spatially resolved and polarization-resolved electroluminescence of 1.3-μm InGaAsP semiconductor diode lasers

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Abstract

Most testing of semiconductor diode lasers involves the measurement of external properties to understand or predict device performance. Spatially resolved electroluminescence (EL) has been shown to provide information about internal properties through direct measurement.1 Dark spot defects (DSDs) and dark line defects (DLDs) can be detected along the laser stripe providing a means for analyzing the devices.2

© 1989 Optical Society of America

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