Abstract

The amount of stimulated emission which is scattered in or near the active region of semiconductor diode lasers has been measured for over thirty 1.3-μm InGaAsP diode lasers of three structures: gain-guided, planar buried heterostructure (PBH), and arrowhead buried crescent (ABC), using spatially and polarization-resolved electroluminescence.¹ Figure 1 is comprised of plots of the degree of polarization along the length of a typical PBH and gain-guided laser. The degree of polarization p we define as the difference in the amount of light in the two orthogonal polarizations divided by the sum, so that scattered TE polarized laser emission results in an increase in p.

© 1990 Optical Society of America