Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Optical Fiber Communications
  • 1997 OSA Technical Digest Series (Optica Publishing Group, 1997),
  • paper WL55

Lifetime projection and degradation mechanism of 1.3-μm InGaAsP/lnP uncooled laser diodes

Not Accessible

Your library or personal account may give you access

Abstract

Large-capacity and high-speed transmission are the main advantages of using optical communication systems, for which semiconductor laser diodes (LDs) with low threshold current are key devices.

© 1997 Optical Society of America

PDF Article
More Like This
Nonradiative interfacial recombination: dominant degradation mechanism in 1.3-μm InGaAsP/InP lasers

JOANNE LACOURSE and ROBERT OLSHANSKY
MG3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1988

Carrier lifetimes and gain in 1.3-μm strained InAsP/InGaAsP multiple-quantum-well lasers

J. M. Pikal, P. Thiagarajan, C. S. Menoni, C. Y. Robinson, and H. Temkin
CTuQ6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1997

Optimization of p-doping profile of 1.3-μm InGaAsP/lnP MQW lasers for high-temperature operation

D.V. Donetsky, C.L. Reynolds, G.L. Belenky, G.E. Shtengel, R.F. Kazarinov, and S. Luryi
CWN2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.