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Conferences > CLEOPR > 2001 > ThC2 > ThC2_2
  • The 4th Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 2001),
  • paper ThC2_2

Low Threshold Current Density Operation (Jth=340A/cm2) of GaInNAs/GaAs Quantum Well Lasers Grown by Metalorganic Chemical Vapor Deposition

M. Kawaguchi, T. Miyamoto, E. Gouardes, T. Kondo, F. Koyama, and K. Iga

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Abstract

We have achieved the lowest threshold current density of 340 A/cm2 in 1.25 μm GaInNAs/GaAs lasers grown by metalorganic chemical vapor deposition. A threshold current density per well of 170 A/cm2 is the record low value for 1.2~1.3 μm GaInNAs lasers.

© 2001 IEEE

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