Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper FO6

High power GaAs/AIGaAs diode lasers grown on Si substrates by single step metal-organic chemical vapor deposition

Not Accessible

Your library or personal account may give you access

Abstract

Monolithic Integrated circuits utilizing the GaAs and Si material systems on the same substrate have generated much interest due to the ability to Integrate optoelectronics, microwave, and high speed digital functions. Diode lasers are currently being investigated as the light source in optoelectronic/eleotronic integrated circuits on Si substrates. Since the first report of lasing from a device fabricated directly on a Si substrate1 much progress has been reported. improvements in the quality of the GaAs/Si interface and the associated reduction in interface dislocations have lead to cw room temperature diode laser operation.2,3

© 1989 Optical Society of America

PDF Article
More Like This
Reliability of AIGaAs/GaAs double heterostructure laser diodes grown by metal-organic chemical vapor deposition

D. BEGLEY, D. DREISEWERD, W. FRITZ, S. SCHWEDT, and G. ELLIOTT
THS6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Low threshold GaAs/AIGaAs patterned quantum well lasers grown by organometallic chemical vapor deposition

E. KARON, R. BHAT, S. SIMHONY, C. P. YUN, D. M. HWANG, and N. G. STOFFEL
FO1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

InGaAs/lnAIGaAs Injection lasers grown on GaAs substrates

P. J. CALDWELL, R. P. LEAVITT, J. K. WHISNANT, S. C. HORST, and F. J. TOWNER
THM4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved