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Flexible GaN-based microscale light-emitting diodes with a batch transfer by wet etching

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Abstract

Flexible inorganic GaN-based microscale light-emitting diodes (µLEDs) show potential applications in wearable electronics, biomedical engineering, and human-machine interfaces. However, developing cost-effective products remains a challenge for flexible GaN-based µLEDs. Here, a facile and stable method is proposed to fabricate flexible GaN-based µLEDs from silicon substrates in an array-scale manner by wet etching. Circular and square µLED arrays with a size and pitch of 500 µm were fabricated and then transferred to a flexible acrylic/copper substrate. The as-fabricated flexible µLEDs can maintain their structure intact while exhibiting a significant increase in external quantum efficiency. This Letter promotes the application of simple and low-cost flexible µLED devices, especially for virtual displays, wearables, and curvilinear displays.

© 2022 Optica Publishing Group

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Supplementary Material (1)

NameDescription
Supplement 1       Experiment sections and some date results

Data availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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