Abstract

The introduction of an in situ C-doped GaN layer in green light-emitting diodes (LEDs) is successfully realized by optimizing the temperature of the GaN growth process. The C-doped GaN film acts as a current spreading layer for green LEDs, allowing for a more uniform current distribution and consequently an increase in luminous efficiency. At the same time, the insertion of a C-doped GaN layer does not lead to the degradation of the surface morphology as well as the crystalline quality. Electroluminescence results show that the C-doped GaN layer grown at 850°C is appropriate to be used in green LEDs.

© 2022 Optica Publishing Group

InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes

Shengjun Zhou, Zehong Wan, Yu Lei, Bin Tang, Guoyi Tao, Peng Du, and Xiaoyu Zhao
Opt. Lett. 47(5) 1291-1294 (2022)

Local dielectric tunnel junction to manage the current distribution for AlGaN-based deep-ultraviolet light-emitting diodes with a thin p-GaN layer

Qingqing Li, Chunshuang Chu, Weidong Wang, Jiamang Che, Hua Shao, Qianqian Liu, Yonghui Zhang, and Zi-hui Zhang
Opt. Lett. 47(14) 3475-3478 (2022)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Zi-Hui Zhang, Swee Tiam Tan, Wei Liu, Zhengang Ju, Ke Zheng, Zabu Kyaw, Yun Ji, Namig Hasanov, Xiao Wei Sun, and Hilmi Volkan Demir
Opt. Express 21(4) 4958-4969 (2013)

GaN-based green resonant-cavity light-emitting diodes with Al mirror and copper plate

Shuai Yang, Huan Xu, Hao Long, Leiying Ying, Ronghuang Luo, Mengjie Zhong, Wenrui Lu, Xiang Hou, Yang Mei, and Baoping Zhang
Opt. Lett. 47(11) 2858-2861 (2022)

Performance enhancement of nitrogen-polar GaN-based light-emitting diodes prepared by metalorganic chemical vapor deposition

Yang Wang, Yusen Wang, Lidong Zhang, Yunfei Niu, Jiaqi Yu, Haotian Ma, Chao Lu, Zhifeng Shi, Gaoqiang Deng, Baolin Zhang, and Yuantao Zhang
Opt. Lett. 47(15) 3628-3631 (2022)