Abstract

We report a near-stoichiometric $\mathrm{Ti}\text{:}\mathrm{Zr}\text{:}{\mathrm{LiNbO}}_3$ strip waveguide fabricated from a congruent substrate with a technological process in the following sequence: ${\mathrm{Zr}}^{4+}$-diffusion-doping, diffusion of 8-μm-wide, 100-nm-thick Ti strips, and post-Li-rich vapor transport equilibration. We show that ${\mathrm{Zr}}^{4+}$-doping has little effect on the ${\mathrm{LiNbO}}_3$ refractive index, and the waveguide is in a near-stoichiometric environment. The waveguide well supports both the TE and TM modes, shows weak polarization dependence, is in single mode at the 1.5 μm wavelength, and has a loss of $\le 0.6/0.8\mathrm{dB}/\mathrm{cm}$ for the TE/TM modes. A secondary ion mass spectrometry analysis shows that the ${\mathrm{Zr}}^{4+}$-profile part with a concentration above the threshold of photorefractive damage entirely covers the waveguide, implying that the waveguide would be optical-damage resistant.

© 2015 Optical Society of America

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