Abstract

We demonstrate the high temperature operation, up to 80°C, of quantum cascade lasers emitting at a wavelength of 20 µm. The lasers are based on the InAs/AlSb materials and take benefit of a low loss plasmon-enhanced dielectric waveguide. The waveguide consists of doped InAs cladding layers and low-doped InAs spacers. For 2.9-mm-long devices, the threshold current density is 4.3 kA/cm2 and the measured peak output power is 7 mW at room temperature. The cavity length dependence of the threshold currents also indicates that very large optical gain is achieved and effectively overcome the strong free carrier absorption.

© 2015 Optical Society of America

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  1. O. Cathabard, R. Teissier, J. Devenson, J. Moreno, and A. N. Baranov, “Quantum cascade lasers emitting near 2.6,” Appl. Phys. Lett.96(14), 141110 (2010).
    [Crossref]
  2. P. Laffaille, J. C. Moreno, R. Teissier, M. Bahriz, and A. N. Baranov, “High temperature operation of short wavelength InAs-based quantum cascade lasers,” AIP Adv.2(2), 022119 (2012).
    [Crossref]
  3. E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
    [Crossref]
  4. G. Lollia, M. Bahriz, A. N. Baranov, P. Laffaille, and R. Teissier, “InAs/AlSb quantum cascade lasers operating near 20 µm,” Electron. Lett.49(19), 1238–1240 (2013).
    [Crossref]
  5. D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli, and R. Teissier, “Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ= 19 μm) with metal-metal resonators,” Appl. Phys. Lett.104(2), 021106 (2014).
    [Crossref]
  6. D. Chastanet, A. Bousseksou, G. Lollia, M. Bahriz, F. H. Julien, A. N. Baranov, R. Teissier, and R. Colombelli, “High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers,” Appl. Phys. Lett.105(11), 111118 (2014).
    [Crossref]
  7. K. Unterrainer, R. Colombelli, C. Gmachl, F. Capasso, H. Y. Hwang, A. M. Sergent, D. L. Sivco, and A. Y. Cho, “Quantum cascade lasers with double metal-semiconductor waveguide resonators,” Appl. Phys. Lett.80(17), 3060–3062 (2002).
    [Crossref]
  8. M. Rochat, D. Hofstetter, M. Beck, and J. Faist, “Long-wavelength (λ ~ 16 µm), room-temperature, single-frequency quantum-cascade lasers based on a bound-to-continuum transition,” Appl. Phys. Lett.79(26), 4271–4273 (2001).
    [Crossref]
  9. K. Ohtani, M. Beck, and J. Faist, “Double metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24 μm,” Appl. Phys. Lett.105(12), 121115 (2014).
    [Crossref]
  10. J. Ulrich, J. Kreuter, W. Schrenk, G. Strasser, and K. Unterrainer, “Long wavelength (15 and 23 mu m) GaAs/AlGaAs quantum cascade lasers,” Appl. Phys. Lett.80(20), 3691–3693 (2002).
    [Crossref]
  11. K. Ohtani, K. Fujita, and H. Ohno, “A low threshold current density InAs/AlGaSb super-lattice quantum cascade laser operating at 14 μm,” Jpn. J. Appl. Phys.43(No. 7A), L879–L881 (2004).
    [Crossref]
  12. Y. B. Li, R. A. Stradling, T. Knight, J. R. Birch, R. H. Thomas, C. C. Phillips, and I. T. Ferguson, “Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy,” Semicond. Sci. Technol.8(1), 101–111 (1993).
    [Crossref]
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  15. G. Cataldo, J. A. Beall, H. M. Cho, B. McAndrew, M. D. Niemack, and E. J. Wollack, “Infrared dielectric properties of low-stress silicon nitride,” Opt. Lett.37(20), 4200–4202 (2012).
    [Crossref] [PubMed]

2014 (3)

D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli, and R. Teissier, “Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ= 19 μm) with metal-metal resonators,” Appl. Phys. Lett.104(2), 021106 (2014).
[Crossref]

D. Chastanet, A. Bousseksou, G. Lollia, M. Bahriz, F. H. Julien, A. N. Baranov, R. Teissier, and R. Colombelli, “High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers,” Appl. Phys. Lett.105(11), 111118 (2014).
[Crossref]

K. Ohtani, M. Beck, and J. Faist, “Double metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24 μm,” Appl. Phys. Lett.105(12), 121115 (2014).
[Crossref]

2013 (1)

G. Lollia, M. Bahriz, A. N. Baranov, P. Laffaille, and R. Teissier, “InAs/AlSb quantum cascade lasers operating near 20 µm,” Electron. Lett.49(19), 1238–1240 (2013).
[Crossref]

2012 (2)

P. Laffaille, J. C. Moreno, R. Teissier, M. Bahriz, and A. N. Baranov, “High temperature operation of short wavelength InAs-based quantum cascade lasers,” AIP Adv.2(2), 022119 (2012).
[Crossref]

G. Cataldo, J. A. Beall, H. M. Cho, B. McAndrew, M. D. Niemack, and E. J. Wollack, “Infrared dielectric properties of low-stress silicon nitride,” Opt. Lett.37(20), 4200–4202 (2012).
[Crossref] [PubMed]

2010 (1)

O. Cathabard, R. Teissier, J. Devenson, J. Moreno, and A. N. Baranov, “Quantum cascade lasers emitting near 2.6,” Appl. Phys. Lett.96(14), 141110 (2010).
[Crossref]

2008 (1)

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
[Crossref]

2007 (1)

2004 (1)

K. Ohtani, K. Fujita, and H. Ohno, “A low threshold current density InAs/AlGaSb super-lattice quantum cascade laser operating at 14 μm,” Jpn. J. Appl. Phys.43(No. 7A), L879–L881 (2004).
[Crossref]

2002 (2)

J. Ulrich, J. Kreuter, W. Schrenk, G. Strasser, and K. Unterrainer, “Long wavelength (15 and 23 mu m) GaAs/AlGaAs quantum cascade lasers,” Appl. Phys. Lett.80(20), 3691–3693 (2002).
[Crossref]

K. Unterrainer, R. Colombelli, C. Gmachl, F. Capasso, H. Y. Hwang, A. M. Sergent, D. L. Sivco, and A. Y. Cho, “Quantum cascade lasers with double metal-semiconductor waveguide resonators,” Appl. Phys. Lett.80(17), 3060–3062 (2002).
[Crossref]

2001 (1)

M. Rochat, D. Hofstetter, M. Beck, and J. Faist, “Long-wavelength (λ ~ 16 µm), room-temperature, single-frequency quantum-cascade lasers based on a bound-to-continuum transition,” Appl. Phys. Lett.79(26), 4271–4273 (2001).
[Crossref]

1993 (1)

Y. B. Li, R. A. Stradling, T. Knight, J. R. Birch, R. H. Thomas, C. C. Phillips, and I. T. Ferguson, “Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy,” Semicond. Sci. Technol.8(1), 101–111 (1993).
[Crossref]

Andrews, A. M.

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
[Crossref]

Bahriz, M.

D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli, and R. Teissier, “Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ= 19 μm) with metal-metal resonators,” Appl. Phys. Lett.104(2), 021106 (2014).
[Crossref]

D. Chastanet, A. Bousseksou, G. Lollia, M. Bahriz, F. H. Julien, A. N. Baranov, R. Teissier, and R. Colombelli, “High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers,” Appl. Phys. Lett.105(11), 111118 (2014).
[Crossref]

G. Lollia, M. Bahriz, A. N. Baranov, P. Laffaille, and R. Teissier, “InAs/AlSb quantum cascade lasers operating near 20 µm,” Electron. Lett.49(19), 1238–1240 (2013).
[Crossref]

P. Laffaille, J. C. Moreno, R. Teissier, M. Bahriz, and A. N. Baranov, “High temperature operation of short wavelength InAs-based quantum cascade lasers,” AIP Adv.2(2), 022119 (2012).
[Crossref]

Baranov, A.

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
[Crossref]

Baranov, A. N.

D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli, and R. Teissier, “Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ= 19 μm) with metal-metal resonators,” Appl. Phys. Lett.104(2), 021106 (2014).
[Crossref]

D. Chastanet, A. Bousseksou, G. Lollia, M. Bahriz, F. H. Julien, A. N. Baranov, R. Teissier, and R. Colombelli, “High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers,” Appl. Phys. Lett.105(11), 111118 (2014).
[Crossref]

G. Lollia, M. Bahriz, A. N. Baranov, P. Laffaille, and R. Teissier, “InAs/AlSb quantum cascade lasers operating near 20 µm,” Electron. Lett.49(19), 1238–1240 (2013).
[Crossref]

P. Laffaille, J. C. Moreno, R. Teissier, M. Bahriz, and A. N. Baranov, “High temperature operation of short wavelength InAs-based quantum cascade lasers,” AIP Adv.2(2), 022119 (2012).
[Crossref]

O. Cathabard, R. Teissier, J. Devenson, J. Moreno, and A. N. Baranov, “Quantum cascade lasers emitting near 2.6,” Appl. Phys. Lett.96(14), 141110 (2010).
[Crossref]

Beall, J. A.

Beck, M.

K. Ohtani, M. Beck, and J. Faist, “Double metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24 μm,” Appl. Phys. Lett.105(12), 121115 (2014).
[Crossref]

M. Rochat, D. Hofstetter, M. Beck, and J. Faist, “Long-wavelength (λ ~ 16 µm), room-temperature, single-frequency quantum-cascade lasers based on a bound-to-continuum transition,” Appl. Phys. Lett.79(26), 4271–4273 (2001).
[Crossref]

Benveniste, E.

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
[Crossref]

Birch, J. R.

Y. B. Li, R. A. Stradling, T. Knight, J. R. Birch, R. H. Thomas, C. C. Phillips, and I. T. Ferguson, “Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy,” Semicond. Sci. Technol.8(1), 101–111 (1993).
[Crossref]

Bousseksou, A.

D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli, and R. Teissier, “Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ= 19 μm) with metal-metal resonators,” Appl. Phys. Lett.104(2), 021106 (2014).
[Crossref]

D. Chastanet, A. Bousseksou, G. Lollia, M. Bahriz, F. H. Julien, A. N. Baranov, R. Teissier, and R. Colombelli, “High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers,” Appl. Phys. Lett.105(11), 111118 (2014).
[Crossref]

Capasso, F.

K. Unterrainer, R. Colombelli, C. Gmachl, F. Capasso, H. Y. Hwang, A. M. Sergent, D. L. Sivco, and A. Y. Cho, “Quantum cascade lasers with double metal-semiconductor waveguide resonators,” Appl. Phys. Lett.80(17), 3060–3062 (2002).
[Crossref]

Cataldo, G.

Cathabard, O.

O. Cathabard, R. Teissier, J. Devenson, J. Moreno, and A. N. Baranov, “Quantum cascade lasers emitting near 2.6,” Appl. Phys. Lett.96(14), 141110 (2010).
[Crossref]

Chastanet, D.

D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli, and R. Teissier, “Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ= 19 μm) with metal-metal resonators,” Appl. Phys. Lett.104(2), 021106 (2014).
[Crossref]

D. Chastanet, A. Bousseksou, G. Lollia, M. Bahriz, F. H. Julien, A. N. Baranov, R. Teissier, and R. Colombelli, “High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers,” Appl. Phys. Lett.105(11), 111118 (2014).
[Crossref]

Cho, A. Y.

K. Unterrainer, R. Colombelli, C. Gmachl, F. Capasso, H. Y. Hwang, A. M. Sergent, D. L. Sivco, and A. Y. Cho, “Quantum cascade lasers with double metal-semiconductor waveguide resonators,” Appl. Phys. Lett.80(17), 3060–3062 (2002).
[Crossref]

Cho, H. M.

Colombelli, R.

D. Chastanet, A. Bousseksou, G. Lollia, M. Bahriz, F. H. Julien, A. N. Baranov, R. Teissier, and R. Colombelli, “High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers,” Appl. Phys. Lett.105(11), 111118 (2014).
[Crossref]

D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli, and R. Teissier, “Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ= 19 μm) with metal-metal resonators,” Appl. Phys. Lett.104(2), 021106 (2014).
[Crossref]

K. Unterrainer, R. Colombelli, C. Gmachl, F. Capasso, H. Y. Hwang, A. M. Sergent, D. L. Sivco, and A. Y. Cho, “Quantum cascade lasers with double metal-semiconductor waveguide resonators,” Appl. Phys. Lett.80(17), 3060–3062 (2002).
[Crossref]

Delteil, A.

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
[Crossref]

Devenson, J.

O. Cathabard, R. Teissier, J. Devenson, J. Moreno, and A. N. Baranov, “Quantum cascade lasers emitting near 2.6,” Appl. Phys. Lett.96(14), 141110 (2010).
[Crossref]

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
[Crossref]

Faist, J.

K. Ohtani, M. Beck, and J. Faist, “Double metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24 μm,” Appl. Phys. Lett.105(12), 121115 (2014).
[Crossref]

M. Rochat, D. Hofstetter, M. Beck, and J. Faist, “Long-wavelength (λ ~ 16 µm), room-temperature, single-frequency quantum-cascade lasers based on a bound-to-continuum transition,” Appl. Phys. Lett.79(26), 4271–4273 (2001).
[Crossref]

Ferguson, I. T.

Y. B. Li, R. A. Stradling, T. Knight, J. R. Birch, R. H. Thomas, C. C. Phillips, and I. T. Ferguson, “Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy,” Semicond. Sci. Technol.8(1), 101–111 (1993).
[Crossref]

Fujita, K.

K. Ohtani, K. Fujita, and H. Ohno, “A low threshold current density InAs/AlGaSb super-lattice quantum cascade laser operating at 14 μm,” Jpn. J. Appl. Phys.43(No. 7A), L879–L881 (2004).
[Crossref]

Gmachl, C.

K. Unterrainer, R. Colombelli, C. Gmachl, F. Capasso, H. Y. Hwang, A. M. Sergent, D. L. Sivco, and A. Y. Cho, “Quantum cascade lasers with double metal-semiconductor waveguide resonators,” Appl. Phys. Lett.80(17), 3060–3062 (2002).
[Crossref]

Hofstetter, D.

M. Rochat, D. Hofstetter, M. Beck, and J. Faist, “Long-wavelength (λ ~ 16 µm), room-temperature, single-frequency quantum-cascade lasers based on a bound-to-continuum transition,” Appl. Phys. Lett.79(26), 4271–4273 (2001).
[Crossref]

Hwang, H. Y.

K. Unterrainer, R. Colombelli, C. Gmachl, F. Capasso, H. Y. Hwang, A. M. Sergent, D. L. Sivco, and A. Y. Cho, “Quantum cascade lasers with double metal-semiconductor waveguide resonators,” Appl. Phys. Lett.80(17), 3060–3062 (2002).
[Crossref]

Jonasz, M.

Julien, F.

D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli, and R. Teissier, “Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ= 19 μm) with metal-metal resonators,” Appl. Phys. Lett.104(2), 021106 (2014).
[Crossref]

Julien, F. H.

D. Chastanet, A. Bousseksou, G. Lollia, M. Bahriz, F. H. Julien, A. N. Baranov, R. Teissier, and R. Colombelli, “High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers,” Appl. Phys. Lett.105(11), 111118 (2014).
[Crossref]

Kitamura, R.

Knight, T.

Y. B. Li, R. A. Stradling, T. Knight, J. R. Birch, R. H. Thomas, C. C. Phillips, and I. T. Ferguson, “Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy,” Semicond. Sci. Technol.8(1), 101–111 (1993).
[Crossref]

Kreuter, J.

J. Ulrich, J. Kreuter, W. Schrenk, G. Strasser, and K. Unterrainer, “Long wavelength (15 and 23 mu m) GaAs/AlGaAs quantum cascade lasers,” Appl. Phys. Lett.80(20), 3691–3693 (2002).
[Crossref]

Laffaille, P.

D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli, and R. Teissier, “Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ= 19 μm) with metal-metal resonators,” Appl. Phys. Lett.104(2), 021106 (2014).
[Crossref]

G. Lollia, M. Bahriz, A. N. Baranov, P. Laffaille, and R. Teissier, “InAs/AlSb quantum cascade lasers operating near 20 µm,” Electron. Lett.49(19), 1238–1240 (2013).
[Crossref]

P. Laffaille, J. C. Moreno, R. Teissier, M. Bahriz, and A. N. Baranov, “High temperature operation of short wavelength InAs-based quantum cascade lasers,” AIP Adv.2(2), 022119 (2012).
[Crossref]

Li, Y. B.

Y. B. Li, R. A. Stradling, T. Knight, J. R. Birch, R. H. Thomas, C. C. Phillips, and I. T. Ferguson, “Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy,” Semicond. Sci. Technol.8(1), 101–111 (1993).
[Crossref]

Lollia, G.

D. Chastanet, A. Bousseksou, G. Lollia, M. Bahriz, F. H. Julien, A. N. Baranov, R. Teissier, and R. Colombelli, “High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers,” Appl. Phys. Lett.105(11), 111118 (2014).
[Crossref]

D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli, and R. Teissier, “Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ= 19 μm) with metal-metal resonators,” Appl. Phys. Lett.104(2), 021106 (2014).
[Crossref]

G. Lollia, M. Bahriz, A. N. Baranov, P. Laffaille, and R. Teissier, “InAs/AlSb quantum cascade lasers operating near 20 µm,” Electron. Lett.49(19), 1238–1240 (2013).
[Crossref]

McAndrew, B.

Moreno, J.

O. Cathabard, R. Teissier, J. Devenson, J. Moreno, and A. N. Baranov, “Quantum cascade lasers emitting near 2.6,” Appl. Phys. Lett.96(14), 141110 (2010).
[Crossref]

Moreno, J. C.

P. Laffaille, J. C. Moreno, R. Teissier, M. Bahriz, and A. N. Baranov, “High temperature operation of short wavelength InAs-based quantum cascade lasers,” AIP Adv.2(2), 022119 (2012).
[Crossref]

Niemack, M. D.

Ohno, H.

K. Ohtani, K. Fujita, and H. Ohno, “A low threshold current density InAs/AlGaSb super-lattice quantum cascade laser operating at 14 μm,” Jpn. J. Appl. Phys.43(No. 7A), L879–L881 (2004).
[Crossref]

Ohtani, K.

K. Ohtani, M. Beck, and J. Faist, “Double metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24 μm,” Appl. Phys. Lett.105(12), 121115 (2014).
[Crossref]

K. Ohtani, K. Fujita, and H. Ohno, “A low threshold current density InAs/AlGaSb super-lattice quantum cascade laser operating at 14 μm,” Jpn. J. Appl. Phys.43(No. 7A), L879–L881 (2004).
[Crossref]

Phillips, C. C.

Y. B. Li, R. A. Stradling, T. Knight, J. R. Birch, R. H. Thomas, C. C. Phillips, and I. T. Ferguson, “Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy,” Semicond. Sci. Technol.8(1), 101–111 (1993).
[Crossref]

Pilon, L.

Rochat, M.

M. Rochat, D. Hofstetter, M. Beck, and J. Faist, “Long-wavelength (λ ~ 16 µm), room-temperature, single-frequency quantum-cascade lasers based on a bound-to-continuum transition,” Appl. Phys. Lett.79(26), 4271–4273 (2001).
[Crossref]

Sagnes, I.

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
[Crossref]

Schrenk, W.

J. Ulrich, J. Kreuter, W. Schrenk, G. Strasser, and K. Unterrainer, “Long wavelength (15 and 23 mu m) GaAs/AlGaAs quantum cascade lasers,” Appl. Phys. Lett.80(20), 3691–3693 (2002).
[Crossref]

Sergent, A. M.

K. Unterrainer, R. Colombelli, C. Gmachl, F. Capasso, H. Y. Hwang, A. M. Sergent, D. L. Sivco, and A. Y. Cho, “Quantum cascade lasers with double metal-semiconductor waveguide resonators,” Appl. Phys. Lett.80(17), 3060–3062 (2002).
[Crossref]

Sirtori, C.

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
[Crossref]

Sivco, D. L.

K. Unterrainer, R. Colombelli, C. Gmachl, F. Capasso, H. Y. Hwang, A. M. Sergent, D. L. Sivco, and A. Y. Cho, “Quantum cascade lasers with double metal-semiconductor waveguide resonators,” Appl. Phys. Lett.80(17), 3060–3062 (2002).
[Crossref]

Stradling, R. A.

Y. B. Li, R. A. Stradling, T. Knight, J. R. Birch, R. H. Thomas, C. C. Phillips, and I. T. Ferguson, “Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy,” Semicond. Sci. Technol.8(1), 101–111 (1993).
[Crossref]

Strasser, G.

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
[Crossref]

J. Ulrich, J. Kreuter, W. Schrenk, G. Strasser, and K. Unterrainer, “Long wavelength (15 and 23 mu m) GaAs/AlGaAs quantum cascade lasers,” Appl. Phys. Lett.80(20), 3691–3693 (2002).
[Crossref]

Teissier, R.

D. Chastanet, A. Bousseksou, G. Lollia, M. Bahriz, F. H. Julien, A. N. Baranov, R. Teissier, and R. Colombelli, “High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers,” Appl. Phys. Lett.105(11), 111118 (2014).
[Crossref]

D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli, and R. Teissier, “Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ= 19 μm) with metal-metal resonators,” Appl. Phys. Lett.104(2), 021106 (2014).
[Crossref]

G. Lollia, M. Bahriz, A. N. Baranov, P. Laffaille, and R. Teissier, “InAs/AlSb quantum cascade lasers operating near 20 µm,” Electron. Lett.49(19), 1238–1240 (2013).
[Crossref]

P. Laffaille, J. C. Moreno, R. Teissier, M. Bahriz, and A. N. Baranov, “High temperature operation of short wavelength InAs-based quantum cascade lasers,” AIP Adv.2(2), 022119 (2012).
[Crossref]

O. Cathabard, R. Teissier, J. Devenson, J. Moreno, and A. N. Baranov, “Quantum cascade lasers emitting near 2.6,” Appl. Phys. Lett.96(14), 141110 (2010).
[Crossref]

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
[Crossref]

Thomas, R. H.

Y. B. Li, R. A. Stradling, T. Knight, J. R. Birch, R. H. Thomas, C. C. Phillips, and I. T. Ferguson, “Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy,” Semicond. Sci. Technol.8(1), 101–111 (1993).
[Crossref]

Ulrich, J.

J. Ulrich, J. Kreuter, W. Schrenk, G. Strasser, and K. Unterrainer, “Long wavelength (15 and 23 mu m) GaAs/AlGaAs quantum cascade lasers,” Appl. Phys. Lett.80(20), 3691–3693 (2002).
[Crossref]

Unterrainer, K.

J. Ulrich, J. Kreuter, W. Schrenk, G. Strasser, and K. Unterrainer, “Long wavelength (15 and 23 mu m) GaAs/AlGaAs quantum cascade lasers,” Appl. Phys. Lett.80(20), 3691–3693 (2002).
[Crossref]

K. Unterrainer, R. Colombelli, C. Gmachl, F. Capasso, H. Y. Hwang, A. M. Sergent, D. L. Sivco, and A. Y. Cho, “Quantum cascade lasers with double metal-semiconductor waveguide resonators,” Appl. Phys. Lett.80(17), 3060–3062 (2002).
[Crossref]

Vasanelli, A.

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
[Crossref]

Wollack, E. J.

AIP Adv. (1)

P. Laffaille, J. C. Moreno, R. Teissier, M. Bahriz, and A. N. Baranov, “High temperature operation of short wavelength InAs-based quantum cascade lasers,” AIP Adv.2(2), 022119 (2012).
[Crossref]

Appl. Opt. (1)

Appl. Phys. Lett. (8)

E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, and C. Sirtori, “Influence of the material parameters on quantum cascade devices,” Appl. Phys. Lett.93(13), 131108 (2008).
[Crossref]

O. Cathabard, R. Teissier, J. Devenson, J. Moreno, and A. N. Baranov, “Quantum cascade lasers emitting near 2.6,” Appl. Phys. Lett.96(14), 141110 (2010).
[Crossref]

D. Chastanet, G. Lollia, A. Bousseksou, M. Bahriz, P. Laffaille, A. N. Baranov, F. Julien, R. Colombelli, and R. Teissier, “Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ= 19 μm) with metal-metal resonators,” Appl. Phys. Lett.104(2), 021106 (2014).
[Crossref]

D. Chastanet, A. Bousseksou, G. Lollia, M. Bahriz, F. H. Julien, A. N. Baranov, R. Teissier, and R. Colombelli, “High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers,” Appl. Phys. Lett.105(11), 111118 (2014).
[Crossref]

K. Unterrainer, R. Colombelli, C. Gmachl, F. Capasso, H. Y. Hwang, A. M. Sergent, D. L. Sivco, and A. Y. Cho, “Quantum cascade lasers with double metal-semiconductor waveguide resonators,” Appl. Phys. Lett.80(17), 3060–3062 (2002).
[Crossref]

M. Rochat, D. Hofstetter, M. Beck, and J. Faist, “Long-wavelength (λ ~ 16 µm), room-temperature, single-frequency quantum-cascade lasers based on a bound-to-continuum transition,” Appl. Phys. Lett.79(26), 4271–4273 (2001).
[Crossref]

K. Ohtani, M. Beck, and J. Faist, “Double metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24 μm,” Appl. Phys. Lett.105(12), 121115 (2014).
[Crossref]

J. Ulrich, J. Kreuter, W. Schrenk, G. Strasser, and K. Unterrainer, “Long wavelength (15 and 23 mu m) GaAs/AlGaAs quantum cascade lasers,” Appl. Phys. Lett.80(20), 3691–3693 (2002).
[Crossref]

Electron. Lett. (1)

G. Lollia, M. Bahriz, A. N. Baranov, P. Laffaille, and R. Teissier, “InAs/AlSb quantum cascade lasers operating near 20 µm,” Electron. Lett.49(19), 1238–1240 (2013).
[Crossref]

Jpn. J. Appl. Phys. (1)

K. Ohtani, K. Fujita, and H. Ohno, “A low threshold current density InAs/AlGaSb super-lattice quantum cascade laser operating at 14 μm,” Jpn. J. Appl. Phys.43(No. 7A), L879–L881 (2004).
[Crossref]

Opt. Lett. (1)

Semicond. Sci. Technol. (1)

Y. B. Li, R. A. Stradling, T. Knight, J. R. Birch, R. H. Thomas, C. C. Phillips, and I. T. Ferguson, “Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy,” Semicond. Sci. Technol.8(1), 101–111 (1993).
[Crossref]

Other (1)

O. Cathabard, “InAs/AlSb quantum cascade lasers,” PhD Thesis, Université Montpellier 2, (2009).

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