Abstract

High-order sideband generation (HSG) in semiconductors under intense terahertz fields has been extensively studied, because it provides essential information for studying ultrafast dynamics in strong-field-dressed quantum materials. In particular, transition metal dichalcogenides (TMDCs), characterized by their unique band structures, provide an exemplary semiconductor system to explore the influence of material band structure on strong-field-induced modulation of HSG. In this work, we investigate the spectro-temporally resolved HSG from different bulk TMDC materials. Our results reveal distinct temporal HSG spectra, which can be attributed to the different absorption behaviors of these materials. Simulations based on the strong-field approximation and Floquet theory can well reproduce the experimental observations. Our work also delves into the spectro-temporal interference that emerges when neighboring harmonic orders overlap in the HSG spectrum. This work enhances our understanding of high-order sideband dynamics in strong-field-dressed semiconductors, offering insights for applications in spectrum- and phase-resolved ultrafast measurements.

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