Abstract

Graphene/semiconductor heterojunction-based photodetectors are expected to achieve high performance in various wavelength regions. Graphene photogated diodes (GPDs) based on such heterojunctions are promising for the fabrication of high-performance photodetectors, which cannot be achieved using conventional technologies. However, their action mechanism has not yet been theoretically demonstrated. In this study, we investigated the mechanism of GPDs with and without an interfacial layer. We demonstrated that the thin interfacial native oxide layer is responsible for the reduction in the Fermi level induced by photogating, which is similar to “photoswitching.” This effect induces an extraordinarily large output current in GPDs with a barrier layer.

© 2023 Optica Publishing Group

Responsivity enhancement of a PtSi photodetector with graphene by the photogating effect

Amir Hossein Mehrfar and Abdollah Eslami Majd
Appl. Opt. 62(5) 1160-1166 (2023)

Turbostratic stacked graphene-based high-responsivity mid-wavelength infrared detector using an enhanced photogating effect

Masaaki Shimatani, Takashi Ikuta, Yuri Sakamoto, Shoichiro Fukushima, Shinpei Ogawa, and Kenzo Maehashi
Opt. Mater. Express 12(2) 458-467 (2022)

Graphene-based deep-ultraviolet photodetectors with ultrahigh responsivity using chemical vapor deposition of hexagonal boron nitride to achieve photogating

Shoichiro Fukushima, Satoru Fukamachi, Masaaki Shimatani, Kenji Kawahara, Hiroki Ago, and Shinpei Ogawa
Opt. Mater. Express 12(5) 2090-2101 (2022)

Experimental comparison between photoconductive and graphene-based photogating detection in a UV-A region

Zahra Sadeghi Neisiani, Mahdi Khaje, Abdollah Eslami Majd, and Amir Hossein Mehrfar
Appl. Opt. 62(16) 4213-4220 (2023)

Graphene−silicon−graphene Schottky junction photodetector with field effect structure

Fengsong Qian, Jun Deng, Chen Xu, Yibo Dong, Liangchen Hu, Guosheng Fu, Yiyang Xie, Pengying Chang, and Jie Sun
Opt. Express 30(21) 38503-38512 (2022)