Comprehensive study and performance analysis of an eco-friendly double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> on Si tandem solar cell

Dolly Kumari; Saurabh Kumar Pandey

doi:10.1364/JOSAB.443938

Journal of the Optical Society of America B
Vol. 39,
Issue 3,
pp. 756-763
(2022)
•https://doi.org/10.1364/JOSAB.443938

Comprehensive study and performance analysis of an eco-friendly double perovskite Cs₂AgBiBr₆ on Si tandem solar cell

Dolly Kumari and Saurabh Kumar Pandey

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Dolly Kumari and Saurabh Kumar Pandey, "Comprehensive study and performance analysis of an eco-friendly double perovskite Cs₂AgBiBr₆ on Si tandem solar cell," J. Opt. Soc. Am. B 39, 756-763 (2022)

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Abstract

With the advent of perovskites on Si technology for a tandem configuration of solar cells, it has become obligatory to take care of the toxicity content present, and proper care should be given for a stable design. Aiming at this, the present paper discusses a comprehensive analysis of lead-free all-inorganic double perovskite/c-Si tandem solar cells. The combination of double perovskite (${\rm{C}}{{\rm{s}}_2}{\rm{AgBiB}}{{\rm{r}}_6}$) as a wider bandgap (2.05 eV) layer and (c-Si) as a lower bandgap (1.12 eV) layer is used for the first time, to our knowledge, and this proposed structure shows optimum device efficiency of 26.38%. Designing the tandem cell is carried out in two steps. First the top cell (${\rm{C}}{{\rm{s}}_2}{\rm{AgBiB}}{{\rm{r}}_6}$) and bottom cell (c-Si) are calibrated according to the data reported so far. Simulation results reflect power conversion efficiency (PCE) values for ${\rm{C}}{{\rm{s}}_2}{\rm{AgBiB}}{{\rm{r}}_6}$ and c-Si cells under an AM 1.5 spectrum to be 8.26% and 22.37%, respectively. After optimizing the performance for top and bottom cells, we evaluated the same for the tandem structure. The current matching condition for the tandem structure is obtained at 0.400 µm and 1 µm thicknesses of the absorber layer for top and bottom cells, respectively. Top and bottom cells with filtered spectra exhibit efficiencies of 8.15% and 18.23%, respectively. Overall, the ${\rm{C}}{{\rm{s}}_2}{\rm{AgBiB}}{{\rm{r}}_6}/{\rm{c}}\text{-}{\rm{Si}}$ tandem configuration yields an impressive PCE of 26.38% with an open circuit voltage of 1.84 V.

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Parameter	FTO	ZnO	${C s}_{2} {A g B i B r}_{6}$	${M o O}_{3}$	$n + S i$	$c - S i (p)$	$p + S i$
Relative permittivity	9	9	5.8	12.5	11.9	11.9	11.9
Bandgap (eV)	3.5	3.3	2.05	3	1.12	1.12	1.12
Electron affinity (eV)	4	4.1	4.19	2.5	3.9	4.05	3.9
Electron mobility ( ${c m}^{2} / V \cdot s$ )	20	100	11.81	25	1215	1041	1215
Hole mobility ( ${c m}^{2} / V \cdot s$ )	10	25	0.49	100	443	421	443
Donor density, $N_{d} ({c m}^{- 3})$	$1.0 \times 1 0^{19}$	$1.0 \times 1 0^{18}$	$1.0 \times 1 0^{19}$	0	$1.0 \times 1 0^{18}$	0	0
Acceptor density $N_{a} ({c m}^{- 3})$	0	0	$1.0 \times 1 0^{19}$	$1.0 \times 1 0^{9}$	0	$1.0 \times 1 0^{15}$	$9.0 \times 1 0^{19}$
CB density ofstates, Nc ( ${c m}^{- 3}$ )	$2.2 \times 1 0^{18}$	$2.2 \times 1 0^{18}$	$1.0 \times 1 0^{16}$	$2.75 \times 1 0^{18}$	$2.8 \times 1 0^{19}$	$2.8 \times 1 0^{19}$	$2.8 \times 1 0^{19}$
VB density ofstates, Nv ( ${c m}^{- 3}$ )	$1.8 \times 1 0^{19}$	$1.9 \times 1 0^{19}$	$1.0 \times 1 0^{16}$	$3.9 \times 1 0^{18}$	$2.6 \times 1 0^{19}$	$2.6 \times 1 0^{19}$	$2.68 \times 1 0^{19}$

Interface	Total Density	Defect Energy Level, above Ev (eV)	Defect Type	Captured Cross Section Electrons ( ${c m}^{2}$ )	Captured Cross Section Holes ( ${c m}^{2}$ )
$M o O_{3} / C s_{2} A g B i B r_{6} i n t e r f a c e$	$1.0 \times 1 0^{11}$	0.6	Neutral	$1.0 \times 1 0^{- 19}$	$1.0 \times 1 0^{- 19}$
$C s_{2} A g B i B r_{6} / Z n O i n t e r f a c e$	$1.0 \times 1 0^{11}$	0.6	Neutral	$1.0 \times 1 0^{- 19}$	$1.0 \times 1 0^{- 19}$

Parameter	ITO	P3HT	$C s_{2} A g B i B r_{6}$	$S n O_{2}$
Thickness (nm)	200	100	150	50
Relative permittivity	8.9	3	5.8	9
Bandgap (eV)	3.5	2	2.05	3.5
Electron affinity (eV)	4.8	3.2	4.19	4
Electron mobility ( $c m^{2} / V . s$ )	10	0.0001	11.81	100
Hole mobility ( $c m^{2} / V . s$ )	10	0.0001	0.49	25
Donor density, Nd ( ${c m}^{- 3}$ )	$1.0 \times 1 0^{16}$	$1.0 \times 1 0^{18}$	$1.0 \times 1 0^{19}$	$1.0 \times 1 0^{15}$
Acceptor density, Na ( ${c m}^{- 3}$ )	0	$1.0 \times 1 0^{18}$	$1.0 \times 1 0^{19}$	0
CB density of states, Nc ( ${c m}^{- 3}$ )	$2.2 \times 1 0^{18}$	$1.0 \times 1 0^{18}$	$1.0 \times 1 0^{16}$	$2.2 \times 1 0^{18}$
VB density of states, Nv ( ${c m}^{- 3}$ )	$1.8 \times 10^{19}$	$1.0 \times 10^{18}$	$1.0 \times 10^{16}$	$1.8 \times 10^{19}$
Defect density ( $c m^{- 3}$ )	${1.0 \times 10}^{15}$	${1.0 \times 10}^{14}$	${3678 \times 10}^{16}$	${1.0 \times 10}^{15}$

Structure	$J_{SC} (m A / {c m}^{2})$	$V_{O C}$ (V)	FF (%)	PCE (%)
$I T O / S n O 2 / C s 2 A g B i B r 6 / P 3 H T / A u$ (experimental) [10]	1.78	1.04	0.78	1.44
$I T O / S n O 2 / C s 2 A g B i B r 6 / P 3 H T / A u$ (simulation)	1.79	1.04	0.7827	1.47

Configuration	$J_{SC} (m A / {c m}^{2})$	$V_{O C}$ (V)	FF (%)	PCE (%)
Top cell	10.5087	1.26	0.6113	8.15
Bottom cell	10.5038	0.5814	0.8232	18.23
Tandem cell	10.5087	1.84	0.6759	26.38

Device Structure	$J_{s c} (m A /$ ${C m}^{2})$	$V_{oc}$ (V)	FF (%)	PCE (%)	Ref.
$N i O / C s_{2} A g B i_{0.75} S b_{0.25} B r_{6} / P C B M / S n O_{2} / P E D O T : P S S / F A C s P b_{0.5} S n_{0.5} I_{3} / C_{60} / B C P$	14.9	1.832	63.57	17.35	[20]
$A u / C u_{2} O / F A M A S n G e I_{3} / {C H}_{3} {N H}_{3} G e I_{3} / Z n O / F T O$	28.36	1.07	84.46	26.72	[23]
$G l a s s / I T O / N i O x / {M A}_{0.8} {C S}_{0.2} P b (I_{0.5} B r_{0.5})_{3} / C_{60} / B i S - C_{60} / S p u t t e r e d I T O / P E D O T : P S S / M A P b_{0.5} S n_{0.5} I_{3} / {I C}_{60} B A / B i S - C_{60} / A g .$	13.74	1.70	74	20.9	[29]
$I T O / P O L Y T P D / {F A}_{0.6} C s_{0.3} {D M A}_{0.1} P b I_{2.4} B r_{0.6} / L i F / C_{60} / P E I E / A Z O / P E D O T : P S S / {F A}_{0.75} C s_{0.25} S n_{0.5} P b_{0.5} I_{3} / C_{60} / B C P / A u$	16	1.88	77	23.1	[30]
$F r o n t c o n t a c t / {C H}_{3} {N H}_{3} P b I C l_{2} / T i O_{2} / c - S i e m i t t e r (n) / c - S i (p) / c - S i B S F (p +) / B a c k C o n t a c t$	42.43	0.736	85.13	26.61	[22]
$N i O / C s_{2} A g B i_{0.75} S b_{0.25} B r_{6} / P C B M / S n o_{2} / P + + S i / n - S i / n + + S i (B S F)$	16.01	1.76	86.7	24.4	[31]
$Z n O / C s_{2} A g B i B r_{6} / M o O_{3} / n^{+} S i / c - S i (p) / p^{+} S i$	10.5087	1.84	67.59	26.38	This work

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Journal of the Optical Society of America B