Abstract

We propose a III–V-based electro-absorption plasmon modulator that can be used to construct fully monolithic plasmonic integrated circuits. Our device consists of a GaInAsP/InP gap-surface-plasmon-polariton waveguide with TiO2/ITO layers on both sides of the InGaAsP core. Using this design, the intensity of transmitted light can be modulated by controlling the carrier concentration of the ITO layer, as a positive gate voltage induces electron accumulation in the ITO layer (this is similar to the operation of FinFETs). The extinction ratio was 4.5dB/μm with a gate voltage swing of 0–5, and the insertion loss was found to be 1.5dB/μm. The figure of merit (ratio of extinction ratio to transmission loss) is 3, a result that is far superior to other conventional Si-based plasmonic photomodulators.

© 2014 Optical Society of America

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