Abstract

We report on hybrid BiCMOS-Silicon photonics receivers with waveguide coupled Ge/Si avalanche photodiodes, designed in a lateral separate charge absorption multiplication configuration. We demonstrate optical modulation amplitude sensitivities of −14.4 dBm for error-free operation at 50 Gb/s and −18.6 dBm under the KP4-FEC limit at 56 Gb/s using NRZ-OOK modulation. An in-depth analysis of the receiver sensitivity is carried out to understand the impact of dark current, and to identify pathways for further improvements. The demonstration of such highly sensitive receivers, supported with a receiver model, paves the way to improve optical link margins at 50 Gb/s and beyond.

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Yuluan Xiang, Hengzhen Cao, Chaoyue Liu, Jingshu Guo, and Daoxin Dai
Optica 9(7) 762-769 (2022)

High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector

H. T. Chen, J. Verbist, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, X. Yin, J. Bauwelinck, J. Van Campenhout, and G. Roelkens
Opt. Express 23(2) 815-822 (2015)

An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetectorin standard SiGe BiCMOS technology

Jin-Sung Youn, Myung-Jae Lee, Kang-Yeob Park, Holger Rücker, and Woo-Young Choi
Opt. Express 20(27) 28153-28162 (2012)

NDR-effect vertical-illumination-type Ge-on-Si avalanche photodetector

Gyungock Kim, Sanghoon Kim, Sun Ae Kim, Jin Hyuk Oh, and Ki-Seok Jang
Opt. Lett. 43(22) 5583-5586 (2018)

25  Gbps low-voltage waveguide Si–Ge avalanche photodiode

Zhihong Huang, Cheng Li, Di Liang, Kunzhi Yu, Charles Santori, Marco Fiorentino, Wayne Sorin, Samuel Palermo, and Raymond G. Beausoleil
Optica 3(8) 793-798 (2016)