Abstract

Modal absorptions in laser-like heterostructures containing InAs self-assembled quantum dots (QDs) and InGaAs quantum well-dots (QWDs) have been studied. The evaluation of photoresponse as a function of waveguide length has allowed us to determine per-layer modal absorptions of 69 and 13 cm^-1 for the ground state optical transitions of QWDs and QDs, respectively. The values of the modal absorption can be used as a measure of the maximal (saturated) modal gain. To compare quantum heterostructures with different dimensionality we have introduced the layer gain constant, a parameter characterizing the light transmittance through the absorbing or gaining layer. We have shown that the QWD layer gain constant significantly exceeds quantum well and quantum dot ones.

Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure

R. P. Prasankumar, R. S. Attaluri, R. D. Averitt, J. Urayama, N. Weisse-Bernstein, P. Rotella, A. D. Stintz, S. Krishna, and A. J. Taylor
Opt. Express 16(2) 1165-1173 (2008)

Frequency response and carrier escape time of InGaAs quantum well-dots photodiode

A. E. Zhukov, S. A. Blokhin, N. A. Maleev, N. V. Kryzhanovskaya, E. I. Moiseev, A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, F. I. Zubov, and M. V. Maximov
Opt. Express 29(25) 40677-40686 (2021)

InAs/InGaAs Quantum Dot Lasers on Multi-Functional Metamorphic Buffer Layers

Jinkwan Kwoen, Takaya Imoto, and Yasuhiko Arakawa
Opt. Express 29(18) 29378-29386 (2021)

Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots

N. V. Kryzhanovskaya, E. I. Moiseev, F. I. Zubov, A. M. Mozharov, M. V. Maximov, N. A. Kalyuzhnyy, S. A. Mintairov, M. M. Kulagina, S. A. Blokhin, K. E. Kudryavtsev, A. N. Yablonskiy, S. V. Morozov, Yu. Berdnikov, S. Rouvimov, and A. E. Zhukov
Photon. Res. 7(6) 664-668 (2019)

High net modal gain (>100 cm⁻¹) in 19-stacked InGaAs quantum dot laser diodes at 1000 nm wavelength band

Fumihiko Tanoue, Hiroharu Sugawara, Kouichi Akahane, and Naokatsu Yamamoto
Opt. Lett. 38(13) 2333-2335 (2013)