Abstract

InP-based high-power and high-speed modified unitraveling carrier photodiodes heterogeneously integrated on silicon-on-insulator waveguides are demonstrated. Internal responsivity up to 0.95A/W and bandwidth up to 48 GHz have been achieved. The maximum RF output power of a $20 \times 35$ μm2 photodiode was 16.6, 15.8, and 13.5 dBm at 10, 20, and 30 GHz, respectively. The maximum output RF power of a $10 \times 35$ μm2 photodiode was 12 dBm at 40 GHz. Using the same integration technology, we show that balanced waveguide photodiodes reach 0.78-A/W internal responsivity, 14-GHz bandwidth, and >20-dB common-mode rejection ratio. In the differential mode, the unsaturated RF output power was 17.2 dBm at 10 GHz and 15.2 dBm at 20 GHz.

© 2015 IEEE

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