Abstract

Recently, microwave photonic techniques have emerged to address the challenges that microwave systems face under high-frequency or wideband conditions. To a large extent, the performance of microwave photonic systems depends on the performance of individual optoelectronics devices, such as high-power and high power conversion efficiency photodiodes. Here, we report on a flip chip bonded on a diamond InP/InGaAs modified unitraveling carrier (MUTC) photodiode with record RF output powers of 32.7 dBm (1.86 W), 29.6 dBm, 28.2 dBm, and 26.2 dBm at 10, 15, 20, and 25 GHz, respectively, without active cooling. The corresponding dissipated powers are 34 dBm (2.5 W), 32.3 dBm, 30.4 dBm, and 28.3 dBm, respectively. Compared with previously reported RF power, the device on the diamond submount achieves >80% higher RF output power. Using the high-power and high-frequency MUTC photodiode on diamond submount, a record power conversion efficiency of 50.7%–60% at 6–10 GHz with 27.8dBm RF output power has been achieved as compared to previously reported efficiencies in the <40% range in the corresponding frequency band.

© 2014 Optical Society of America

Full Article  |  PDF Article
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References

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    [Crossref]

2014 (2)

2013 (4)

T. M. Fortier, F. Quinlan, A. Hati, C. Nelson, J. A. Taylor, Y. Fu, J. Campbell, S. A. Diaddams, “Photonic microwave generation with high-power photodiodes,” Opt. Lett. 38, 1712–1714 (2013).
[Crossref]

A. S. Cross, Q. Zhou, A. Beling, Y. Fu, J. C. Campbell, “High-power flip-chip mounted photodiode array,” Opt. Express 21, 9967–9973 (2013).
[Crossref]

Q. Zhou, A. S. Cross, A. Beling, Y. Fu, Z. W. Lu, J. C. Campbell, “High-power V-band InGaAs/InP photodiodes,” IEEE Photon. Technol. Lett. 25, 907–909 (2013).
[Crossref]

Q. Zhou, A. S. Cross, F. Yang, A. Beling, B. M. Foley, P. E. Hopkins, J. C. Campbell, “Balanced InP/InGaAs photodiodes with 1.5-W output power,” IEEE Photon. J. 5, 6800307 (2013).
[Crossref]

2011 (2)

2010 (3)

S. Itakura, K. Sakai, T. Nagatsuka, E. Ishimura, M. Nakaji, H. Otsuka, K. Mori, Y. Hirano, “High-current backside-illuminated photodiode array module for optical analog links,” J. Lightwave Technol. 28, 965–971 (2010).
[Crossref]

K. Sakai, E. Ishimura, M. Nakaji, S. Itakura, Y. Hirano, T. Aoyagi, “High-current back-illuminated partially depleted-absorber p-i-n photodiode with depleted nonabsorbing region,” IEEE Trans. Microwave Theor. Tech. 58, 3154–3160 (2010).
[Crossref]

Z. Li, H. P. Pan, H. Chen, A. Beling, J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46, 626–632 (2010).
[Crossref]

2009 (1)

A. Wootten, A. R. Thompson, “The Atacama large millimeter/submillimeter array,” Proc. IEEE 97, 1463–1471 (2009).
[Crossref]

2008 (2)

D. A. Tulchinsky, J. B. Boos, D. Park, P. G. Goetz, W. S. Rabinovich, K. J. Williams, “High-current photodetectors as efficient, linear, and high-power RF output stages,” J. Lightwave Technol. 26, 408–416 (2008).
[Crossref]

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20, 202–204 (2008).
[Crossref]

2007 (1)

X. Wang, N. Duan, H. Chen, J. C. Campbell, “InGaAs–InP photodiodes with high responsivity and high saturation power,” IEEE Photon. Technol. Lett. 19, 1272–1274 (2007).
[Crossref]

2006 (1)

N. Duan, X. Wang, N. Li, H. Liu, J. C. Campbell, “Thermal analysis of high-power InGaAs–InP photodiodes,” IEEE J. Quantum Electron. 42, 1255–1258 (2006).
[Crossref]

2004 (2)

N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T. D. Isshiki, G. S. Kinsey, R. Sudharsansan, “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photon. Technol. Lett. 16, 864–866 (2004).
[Crossref]

D. A. Tulchinsky, X. Li, N. Li, S. Demiguel, J. C. Campbell, K. J. Williams, “High-saturation current wide-bandwidth photodetectors,” IEEE J. Sel. Top. Quantum Electron. 10, 702–708 (2004).
[Crossref]

2003 (1)

X. Li, S. Demiguel, N. Li, J. C. Campbell, D. L. Tulchinsky, K. J. Williams, “Backside illuminated high saturation current partially depleted absorber photodetecters,” Electron. Lett. 39, 1466–1467 (2003).
[Crossref]

2000 (2)

N. Shimizu, Y. Miyamoto, A. Hirano, K. Sato, T. Ishibashi, “RF saturation mechanism of InP/InGaAs uni-travelling-carrier photodiode,” Electron. Lett. 36, 750–751 (2000).
[Crossref]

S. Tonda-Goldstein, D. Dolfi, J. Huignard, G. Charlet, J. Chazelas, “Stimulated Brillouin scattering for microwave signal modulation depth increase in optical links,” Electron. Lett. 36, 944–946 (2000).
[Crossref]

1995 (1)

R. Esman, K. Williams, “Wideband efficiency improvement of fiber optic systems by carrier subtraction,” IEEE Photon. Technol. Lett. 7, 218–220 (1995).
[Crossref]

Achouche, M.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20, 202–204 (2008).
[Crossref]

M. Chtioui, A. Enard, D. Carpentier, F. Lelarge, B. Rousseau, M. Achouche, A. Marceaux, A. Renoult, C. Feuillet, M. Queguiner, T. Merlet, “High power UTC photodiodes design and application for analog fiber optic links,” in International Topical Meeting on Microwave Photonics (IEEE, 2009), pp. 1–4.

Aoyagi, T.

K. Sakai, E. Ishimura, M. Nakaji, S. Itakura, Y. Hirano, T. Aoyagi, “High-current back-illuminated partially depleted-absorber p-i-n photodiode with depleted nonabsorbing region,” IEEE Trans. Microwave Theor. Tech. 58, 3154–3160 (2010).
[Crossref]

Bahl, I.

I. Bahl, Fundamentals of RF and Microwave Transistor Amplifiers (Wiley, 2009).

Baynes, F. N.

Beling, A.

E. Rouvalis, F. N. Baynes, X. Xie, K. Li, Q. Zhou, F. Quinlan, T. M. Fortier, S. A. Diddams, A. G. Steffan, A. Beling, J. C. Campbell, “High-power and high-linearity photodetector modules for microwave photonic applications,” J. Lightwave Technol. 32, 3810–3816 (2014).
[Crossref]

X. Xie, K. Li, Q. Zhou, A. Beling, J. Campbell, “High-gain, low-noise-figure, and high-linearity analog photonic link based on a high-performance photodetector,” J. Lightwave Technol. 32, 3585–3590 (2014).
[Crossref]

A. S. Cross, Q. Zhou, A. Beling, Y. Fu, J. C. Campbell, “High-power flip-chip mounted photodiode array,” Opt. Express 21, 9967–9973 (2013).
[Crossref]

Q. Zhou, A. S. Cross, F. Yang, A. Beling, B. M. Foley, P. E. Hopkins, J. C. Campbell, “Balanced InP/InGaAs photodiodes with 1.5-W output power,” IEEE Photon. J. 5, 6800307 (2013).
[Crossref]

Q. Zhou, A. S. Cross, A. Beling, Y. Fu, Z. W. Lu, J. C. Campbell, “High-power V-band InGaAs/InP photodiodes,” IEEE Photon. Technol. Lett. 25, 907–909 (2013).
[Crossref]

Z. Li, Y. Fu, M. Piels, H. Pan, A. Beling, J. E. Bowers, J. C. Campbell, “High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode,” Opt. Express 19, B385–B390 (2011).
[Crossref]

Z. Li, H. P. Pan, H. Chen, A. Beling, J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46, 626–632 (2010).
[Crossref]

Q. Zhou, A. S. Cross, F. Yang, A. Beling, J. C. Campbell, “High-power high-bandwidth flip-chip bonded modified uni-traveling carrier photodiodes,” in Photonics Conference (IEEE, 2012), pp. 306–307.

Q. Zhou, A. S. Cross, F. Yang, A. Beling, J. C. Campbell, “Development of narrowband modified uni-travelling-carrier photodiodes with high power efficiency,” in Avionics, Fiber-Optics and Photonics Conference (IEEE, 2013), pp. 65–66.

A. Beling, A. S. Cross, Q. Zhou, Y. Fu, J. C. Campbell, “High-power flip-chip balanced photodetector with >40  GHz bandwidth,” in Photonics Conference (IEEE, 2013), pp. 352–353.

Bernard, S.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20, 202–204 (2008).
[Crossref]

Boos, J. B.

Bowers, J. E.

Bucholtz, F.

Campbell, J.

Campbell, J. C.

E. Rouvalis, F. N. Baynes, X. Xie, K. Li, Q. Zhou, F. Quinlan, T. M. Fortier, S. A. Diddams, A. G. Steffan, A. Beling, J. C. Campbell, “High-power and high-linearity photodetector modules for microwave photonic applications,” J. Lightwave Technol. 32, 3810–3816 (2014).
[Crossref]

Q. Zhou, A. S. Cross, F. Yang, A. Beling, B. M. Foley, P. E. Hopkins, J. C. Campbell, “Balanced InP/InGaAs photodiodes with 1.5-W output power,” IEEE Photon. J. 5, 6800307 (2013).
[Crossref]

Q. Zhou, A. S. Cross, A. Beling, Y. Fu, Z. W. Lu, J. C. Campbell, “High-power V-band InGaAs/InP photodiodes,” IEEE Photon. Technol. Lett. 25, 907–909 (2013).
[Crossref]

A. S. Cross, Q. Zhou, A. Beling, Y. Fu, J. C. Campbell, “High-power flip-chip mounted photodiode array,” Opt. Express 21, 9967–9973 (2013).
[Crossref]

Z. Li, Y. Fu, M. Piels, H. Pan, A. Beling, J. E. Bowers, J. C. Campbell, “High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode,” Opt. Express 19, B385–B390 (2011).
[Crossref]

Z. Li, H. P. Pan, H. Chen, A. Beling, J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46, 626–632 (2010).
[Crossref]

X. Wang, N. Duan, H. Chen, J. C. Campbell, “InGaAs–InP photodiodes with high responsivity and high saturation power,” IEEE Photon. Technol. Lett. 19, 1272–1274 (2007).
[Crossref]

N. Duan, X. Wang, N. Li, H. Liu, J. C. Campbell, “Thermal analysis of high-power InGaAs–InP photodiodes,” IEEE J. Quantum Electron. 42, 1255–1258 (2006).
[Crossref]

N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T. D. Isshiki, G. S. Kinsey, R. Sudharsansan, “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photon. Technol. Lett. 16, 864–866 (2004).
[Crossref]

D. A. Tulchinsky, X. Li, N. Li, S. Demiguel, J. C. Campbell, K. J. Williams, “High-saturation current wide-bandwidth photodetectors,” IEEE J. Sel. Top. Quantum Electron. 10, 702–708 (2004).
[Crossref]

X. Li, S. Demiguel, N. Li, J. C. Campbell, D. L. Tulchinsky, K. J. Williams, “Backside illuminated high saturation current partially depleted absorber photodetecters,” Electron. Lett. 39, 1466–1467 (2003).
[Crossref]

Q. Zhou, A. S. Cross, F. Yang, A. Beling, J. C. Campbell, “Development of narrowband modified uni-travelling-carrier photodiodes with high power efficiency,” in Avionics, Fiber-Optics and Photonics Conference (IEEE, 2013), pp. 65–66.

Q. Zhou, A. S. Cross, F. Yang, A. Beling, J. C. Campbell, “High-power high-bandwidth flip-chip bonded modified uni-traveling carrier photodiodes,” in Photonics Conference (IEEE, 2012), pp. 306–307.

A. Beling, A. S. Cross, Q. Zhou, Y. Fu, J. C. Campbell, “High-power flip-chip balanced photodetector with >40  GHz bandwidth,” in Photonics Conference (IEEE, 2013), pp. 352–353.

Campillo, A. L.

Carpentier, D.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20, 202–204 (2008).
[Crossref]

M. Chtioui, A. Enard, D. Carpentier, F. Lelarge, B. Rousseau, M. Achouche, A. Marceaux, A. Renoult, C. Feuillet, M. Queguiner, T. Merlet, “High power UTC photodiodes design and application for analog fiber optic links,” in International Topical Meeting on Microwave Photonics (IEEE, 2009), pp. 1–4.

Charlet, G.

S. Tonda-Goldstein, D. Dolfi, J. Huignard, G. Charlet, J. Chazelas, “Stimulated Brillouin scattering for microwave signal modulation depth increase in optical links,” Electron. Lett. 36, 944–946 (2000).
[Crossref]

Chazelas, J.

S. Tonda-Goldstein, D. Dolfi, J. Huignard, G. Charlet, J. Chazelas, “Stimulated Brillouin scattering for microwave signal modulation depth increase in optical links,” Electron. Lett. 36, 944–946 (2000).
[Crossref]

Chen, H.

Z. Li, H. P. Pan, H. Chen, A. Beling, J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46, 626–632 (2010).
[Crossref]

X. Wang, N. Duan, H. Chen, J. C. Campbell, “InGaAs–InP photodiodes with high responsivity and high saturation power,” IEEE Photon. Technol. Lett. 19, 1272–1274 (2007).
[Crossref]

Chtioui, M.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20, 202–204 (2008).
[Crossref]

M. Chtioui, A. Enard, D. Carpentier, F. Lelarge, B. Rousseau, M. Achouche, A. Marceaux, A. Renoult, C. Feuillet, M. Queguiner, T. Merlet, “High power UTC photodiodes design and application for analog fiber optic links,” in International Topical Meeting on Microwave Photonics (IEEE, 2009), pp. 1–4.

Colladay, K.

U. Gliese, K. Colladay, A. S. Hastings, D. A. Tulchinsky, V. J. Urick, K. J. Williams, “53.5% photodiode RF power conversion efficiency,” in National Fiber Optic Engineers Conference 2010 (Optical Society of America, 2010), paper PDPA7.

Cross, A. S.

Q. Zhou, A. S. Cross, F. Yang, A. Beling, B. M. Foley, P. E. Hopkins, J. C. Campbell, “Balanced InP/InGaAs photodiodes with 1.5-W output power,” IEEE Photon. J. 5, 6800307 (2013).
[Crossref]

Q. Zhou, A. S. Cross, A. Beling, Y. Fu, Z. W. Lu, J. C. Campbell, “High-power V-band InGaAs/InP photodiodes,” IEEE Photon. Technol. Lett. 25, 907–909 (2013).
[Crossref]

A. S. Cross, Q. Zhou, A. Beling, Y. Fu, J. C. Campbell, “High-power flip-chip mounted photodiode array,” Opt. Express 21, 9967–9973 (2013).
[Crossref]

A. Beling, A. S. Cross, Q. Zhou, Y. Fu, J. C. Campbell, “High-power flip-chip balanced photodetector with >40  GHz bandwidth,” in Photonics Conference (IEEE, 2013), pp. 352–353.

Q. Zhou, A. S. Cross, F. Yang, A. Beling, J. C. Campbell, “Development of narrowband modified uni-travelling-carrier photodiodes with high power efficiency,” in Avionics, Fiber-Optics and Photonics Conference (IEEE, 2013), pp. 65–66.

Q. Zhou, A. S. Cross, F. Yang, A. Beling, J. C. Campbell, “High-power high-bandwidth flip-chip bonded modified uni-traveling carrier photodiodes,” in Photonics Conference (IEEE, 2012), pp. 306–307.

Demiguel, S.

N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T. D. Isshiki, G. S. Kinsey, R. Sudharsansan, “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photon. Technol. Lett. 16, 864–866 (2004).
[Crossref]

D. A. Tulchinsky, X. Li, N. Li, S. Demiguel, J. C. Campbell, K. J. Williams, “High-saturation current wide-bandwidth photodetectors,” IEEE J. Sel. Top. Quantum Electron. 10, 702–708 (2004).
[Crossref]

X. Li, S. Demiguel, N. Li, J. C. Campbell, D. L. Tulchinsky, K. J. Williams, “Backside illuminated high saturation current partially depleted absorber photodetecters,” Electron. Lett. 39, 1466–1467 (2003).
[Crossref]

Devgan, P. S.

Dexter, J. L.

Diaddams, S. A.

Diddams, S. A.

Dolfi, D.

S. Tonda-Goldstein, D. Dolfi, J. Huignard, G. Charlet, J. Chazelas, “Stimulated Brillouin scattering for microwave signal modulation depth increase in optical links,” Electron. Lett. 36, 944–946 (2000).
[Crossref]

Duan, N.

X. Wang, N. Duan, H. Chen, J. C. Campbell, “InGaAs–InP photodiodes with high responsivity and high saturation power,” IEEE Photon. Technol. Lett. 19, 1272–1274 (2007).
[Crossref]

N. Duan, X. Wang, N. Li, H. Liu, J. C. Campbell, “Thermal analysis of high-power InGaAs–InP photodiodes,” IEEE J. Quantum Electron. 42, 1255–1258 (2006).
[Crossref]

Enard, A.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20, 202–204 (2008).
[Crossref]

M. Chtioui, A. Enard, D. Carpentier, F. Lelarge, B. Rousseau, M. Achouche, A. Marceaux, A. Renoult, C. Feuillet, M. Queguiner, T. Merlet, “High power UTC photodiodes design and application for analog fiber optic links,” in International Topical Meeting on Microwave Photonics (IEEE, 2009), pp. 1–4.

Esman, R.

R. Esman, K. Williams, “Wideband efficiency improvement of fiber optic systems by carrier subtraction,” IEEE Photon. Technol. Lett. 7, 218–220 (1995).
[Crossref]

Feuillet, C.

M. Chtioui, A. Enard, D. Carpentier, F. Lelarge, B. Rousseau, M. Achouche, A. Marceaux, A. Renoult, C. Feuillet, M. Queguiner, T. Merlet, “High power UTC photodiodes design and application for analog fiber optic links,” in International Topical Meeting on Microwave Photonics (IEEE, 2009), pp. 1–4.

Foley, B. M.

Q. Zhou, A. S. Cross, F. Yang, A. Beling, B. M. Foley, P. E. Hopkins, J. C. Campbell, “Balanced InP/InGaAs photodiodes with 1.5-W output power,” IEEE Photon. J. 5, 6800307 (2013).
[Crossref]

Fortier, T. M.

Fu, Y.

Furuta, T.

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, T. Furuta, “Uni-traveling-carrier photodiodes,” in Ultrafast Electronics and Optoelectronics, M. Nuss, J. Bowers, eds., Vol. 13 of OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

Gliese, U.

U. Gliese, K. Colladay, A. S. Hastings, D. A. Tulchinsky, V. J. Urick, K. J. Williams, “53.5% photodiode RF power conversion efficiency,” in National Fiber Optic Engineers Conference 2010 (Optical Society of America, 2010), paper PDPA7.

Goetz, P. G.

Hastings, A. S.

U. Gliese, K. Colladay, A. S. Hastings, D. A. Tulchinsky, V. J. Urick, K. J. Williams, “53.5% photodiode RF power conversion efficiency,” in National Fiber Optic Engineers Conference 2010 (Optical Society of America, 2010), paper PDPA7.

Hati, A.

Hirano, A.

N. Shimizu, Y. Miyamoto, A. Hirano, K. Sato, T. Ishibashi, “RF saturation mechanism of InP/InGaAs uni-travelling-carrier photodiode,” Electron. Lett. 36, 750–751 (2000).
[Crossref]

Hirano, Y.

K. Sakai, E. Ishimura, M. Nakaji, S. Itakura, Y. Hirano, T. Aoyagi, “High-current back-illuminated partially depleted-absorber p-i-n photodiode with depleted nonabsorbing region,” IEEE Trans. Microwave Theor. Tech. 58, 3154–3160 (2010).
[Crossref]

S. Itakura, K. Sakai, T. Nagatsuka, E. Ishimura, M. Nakaji, H. Otsuka, K. Mori, Y. Hirano, “High-current backside-illuminated photodiode array module for optical analog links,” J. Lightwave Technol. 28, 965–971 (2010).
[Crossref]

T. Nagatsuka, S. Itakura, K. Sakai, Y. Hirano, “High-power microwave photodiode array for radio over fiber applications,” in Opto-Electronics and Communications Conference (IEEE, 2008), pp. 1–2.

Hopkins, P. E.

Q. Zhou, A. S. Cross, F. Yang, A. Beling, B. M. Foley, P. E. Hopkins, J. C. Campbell, “Balanced InP/InGaAs photodiodes with 1.5-W output power,” IEEE Photon. J. 5, 6800307 (2013).
[Crossref]

Huignard, J.

S. Tonda-Goldstein, D. Dolfi, J. Huignard, G. Charlet, J. Chazelas, “Stimulated Brillouin scattering for microwave signal modulation depth increase in optical links,” Electron. Lett. 36, 944–946 (2000).
[Crossref]

Ishibashi, T.

N. Shimizu, Y. Miyamoto, A. Hirano, K. Sato, T. Ishibashi, “RF saturation mechanism of InP/InGaAs uni-travelling-carrier photodiode,” Electron. Lett. 36, 750–751 (2000).
[Crossref]

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, T. Furuta, “Uni-traveling-carrier photodiodes,” in Ultrafast Electronics and Optoelectronics, M. Nuss, J. Bowers, eds., Vol. 13 of OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

T. Nagatsuma, N. Sahri, M. Yaita, T. Ishibashi, N. Shimizu, K. Sato, “All optoelectronic generation and detection of millimeter-wave signals,” in International Topical Meeting on Microwave Photonics (IEEE, 1998), pp. 5–8.

Ishimura, E.

K. Sakai, E. Ishimura, M. Nakaji, S. Itakura, Y. Hirano, T. Aoyagi, “High-current back-illuminated partially depleted-absorber p-i-n photodiode with depleted nonabsorbing region,” IEEE Trans. Microwave Theor. Tech. 58, 3154–3160 (2010).
[Crossref]

S. Itakura, K. Sakai, T. Nagatsuka, E. Ishimura, M. Nakaji, H. Otsuka, K. Mori, Y. Hirano, “High-current backside-illuminated photodiode array module for optical analog links,” J. Lightwave Technol. 28, 965–971 (2010).
[Crossref]

Isshiki, T. D.

N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T. D. Isshiki, G. S. Kinsey, R. Sudharsansan, “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photon. Technol. Lett. 16, 864–866 (2004).
[Crossref]

Itakura, S.

K. Sakai, E. Ishimura, M. Nakaji, S. Itakura, Y. Hirano, T. Aoyagi, “High-current back-illuminated partially depleted-absorber p-i-n photodiode with depleted nonabsorbing region,” IEEE Trans. Microwave Theor. Tech. 58, 3154–3160 (2010).
[Crossref]

S. Itakura, K. Sakai, T. Nagatsuka, E. Ishimura, M. Nakaji, H. Otsuka, K. Mori, Y. Hirano, “High-current backside-illuminated photodiode array module for optical analog links,” J. Lightwave Technol. 28, 965–971 (2010).
[Crossref]

T. Nagatsuka, S. Itakura, K. Sakai, Y. Hirano, “High-power microwave photodiode array for radio over fiber applications,” in Opto-Electronics and Communications Conference (IEEE, 2008), pp. 1–2.

Ito, H.

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, T. Furuta, “Uni-traveling-carrier photodiodes,” in Ultrafast Electronics and Optoelectronics, M. Nuss, J. Bowers, eds., Vol. 13 of OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

Kinsey, G. S.

N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T. D. Isshiki, G. S. Kinsey, R. Sudharsansan, “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photon. Technol. Lett. 16, 864–866 (2004).
[Crossref]

Kodama, S.

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, T. Furuta, “Uni-traveling-carrier photodiodes,” in Ultrafast Electronics and Optoelectronics, M. Nuss, J. Bowers, eds., Vol. 13 of OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

Lelarge, F.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20, 202–204 (2008).
[Crossref]

M. Chtioui, A. Enard, D. Carpentier, F. Lelarge, B. Rousseau, M. Achouche, A. Marceaux, A. Renoult, C. Feuillet, M. Queguiner, T. Merlet, “High power UTC photodiodes design and application for analog fiber optic links,” in International Topical Meeting on Microwave Photonics (IEEE, 2009), pp. 1–4.

Li, K.

Li, N.

N. Duan, X. Wang, N. Li, H. Liu, J. C. Campbell, “Thermal analysis of high-power InGaAs–InP photodiodes,” IEEE J. Quantum Electron. 42, 1255–1258 (2006).
[Crossref]

N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T. D. Isshiki, G. S. Kinsey, R. Sudharsansan, “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photon. Technol. Lett. 16, 864–866 (2004).
[Crossref]

D. A. Tulchinsky, X. Li, N. Li, S. Demiguel, J. C. Campbell, K. J. Williams, “High-saturation current wide-bandwidth photodetectors,” IEEE J. Sel. Top. Quantum Electron. 10, 702–708 (2004).
[Crossref]

X. Li, S. Demiguel, N. Li, J. C. Campbell, D. L. Tulchinsky, K. J. Williams, “Backside illuminated high saturation current partially depleted absorber photodetecters,” Electron. Lett. 39, 1466–1467 (2003).
[Crossref]

Li, X.

N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T. D. Isshiki, G. S. Kinsey, R. Sudharsansan, “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photon. Technol. Lett. 16, 864–866 (2004).
[Crossref]

D. A. Tulchinsky, X. Li, N. Li, S. Demiguel, J. C. Campbell, K. J. Williams, “High-saturation current wide-bandwidth photodetectors,” IEEE J. Sel. Top. Quantum Electron. 10, 702–708 (2004).
[Crossref]

X. Li, S. Demiguel, N. Li, J. C. Campbell, D. L. Tulchinsky, K. J. Williams, “Backside illuminated high saturation current partially depleted absorber photodetecters,” Electron. Lett. 39, 1466–1467 (2003).
[Crossref]

Li, Z.

Z. Li, Y. Fu, M. Piels, H. Pan, A. Beling, J. E. Bowers, J. C. Campbell, “High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode,” Opt. Express 19, B385–B390 (2011).
[Crossref]

Z. Li, H. P. Pan, H. Chen, A. Beling, J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46, 626–632 (2010).
[Crossref]

Liu, H.

N. Duan, X. Wang, N. Li, H. Liu, J. C. Campbell, “Thermal analysis of high-power InGaAs–InP photodiodes,” IEEE J. Quantum Electron. 42, 1255–1258 (2006).
[Crossref]

Lu, Z. W.

Q. Zhou, A. S. Cross, A. Beling, Y. Fu, Z. W. Lu, J. C. Campbell, “High-power V-band InGaAs/InP photodiodes,” IEEE Photon. Technol. Lett. 25, 907–909 (2013).
[Crossref]

Marceaux, A.

M. Chtioui, A. Enard, D. Carpentier, F. Lelarge, B. Rousseau, M. Achouche, A. Marceaux, A. Renoult, C. Feuillet, M. Queguiner, T. Merlet, “High power UTC photodiodes design and application for analog fiber optic links,” in International Topical Meeting on Microwave Photonics (IEEE, 2009), pp. 1–4.

McKinney, J. D.

Merlet, T.

M. Chtioui, A. Enard, D. Carpentier, F. Lelarge, B. Rousseau, M. Achouche, A. Marceaux, A. Renoult, C. Feuillet, M. Queguiner, T. Merlet, “High power UTC photodiodes design and application for analog fiber optic links,” in International Topical Meeting on Microwave Photonics (IEEE, 2009), pp. 1–4.

Miyamoto, Y.

N. Shimizu, Y. Miyamoto, A. Hirano, K. Sato, T. Ishibashi, “RF saturation mechanism of InP/InGaAs uni-travelling-carrier photodiode,” Electron. Lett. 36, 750–751 (2000).
[Crossref]

Mori, K.

Nagatsuka, T.

S. Itakura, K. Sakai, T. Nagatsuka, E. Ishimura, M. Nakaji, H. Otsuka, K. Mori, Y. Hirano, “High-current backside-illuminated photodiode array module for optical analog links,” J. Lightwave Technol. 28, 965–971 (2010).
[Crossref]

T. Nagatsuka, S. Itakura, K. Sakai, Y. Hirano, “High-power microwave photodiode array for radio over fiber applications,” in Opto-Electronics and Communications Conference (IEEE, 2008), pp. 1–2.

Nagatsuma, T.

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, T. Furuta, “Uni-traveling-carrier photodiodes,” in Ultrafast Electronics and Optoelectronics, M. Nuss, J. Bowers, eds., Vol. 13 of OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

T. Nagatsuma, N. Sahri, M. Yaita, T. Ishibashi, N. Shimizu, K. Sato, “All optoelectronic generation and detection of millimeter-wave signals,” in International Topical Meeting on Microwave Photonics (IEEE, 1998), pp. 5–8.

Nakaji, M.

K. Sakai, E. Ishimura, M. Nakaji, S. Itakura, Y. Hirano, T. Aoyagi, “High-current back-illuminated partially depleted-absorber p-i-n photodiode with depleted nonabsorbing region,” IEEE Trans. Microwave Theor. Tech. 58, 3154–3160 (2010).
[Crossref]

S. Itakura, K. Sakai, T. Nagatsuka, E. Ishimura, M. Nakaji, H. Otsuka, K. Mori, Y. Hirano, “High-current backside-illuminated photodiode array module for optical analog links,” J. Lightwave Technol. 28, 965–971 (2010).
[Crossref]

Nelson, C.

Otsuka, H.

Pan, H.

Pan, H. P.

Z. Li, H. P. Pan, H. Chen, A. Beling, J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46, 626–632 (2010).
[Crossref]

Park, D.

Piels, M.

Pommereau, F.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20, 202–204 (2008).
[Crossref]

Queguiner, M.

M. Chtioui, A. Enard, D. Carpentier, F. Lelarge, B. Rousseau, M. Achouche, A. Marceaux, A. Renoult, C. Feuillet, M. Queguiner, T. Merlet, “High power UTC photodiodes design and application for analog fiber optic links,” in International Topical Meeting on Microwave Photonics (IEEE, 2009), pp. 1–4.

Quinlan, F.

Rabinovich, W. S.

Renoult, A.

M. Chtioui, A. Enard, D. Carpentier, F. Lelarge, B. Rousseau, M. Achouche, A. Marceaux, A. Renoult, C. Feuillet, M. Queguiner, T. Merlet, “High power UTC photodiodes design and application for analog fiber optic links,” in International Topical Meeting on Microwave Photonics (IEEE, 2009), pp. 1–4.

Rousseau, B.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20, 202–204 (2008).
[Crossref]

M. Chtioui, A. Enard, D. Carpentier, F. Lelarge, B. Rousseau, M. Achouche, A. Marceaux, A. Renoult, C. Feuillet, M. Queguiner, T. Merlet, “High power UTC photodiodes design and application for analog fiber optic links,” in International Topical Meeting on Microwave Photonics (IEEE, 2009), pp. 1–4.

Rouvalis, E.

Sahri, N.

T. Nagatsuma, N. Sahri, M. Yaita, T. Ishibashi, N. Shimizu, K. Sato, “All optoelectronic generation and detection of millimeter-wave signals,” in International Topical Meeting on Microwave Photonics (IEEE, 1998), pp. 5–8.

Sakai, K.

K. Sakai, E. Ishimura, M. Nakaji, S. Itakura, Y. Hirano, T. Aoyagi, “High-current back-illuminated partially depleted-absorber p-i-n photodiode with depleted nonabsorbing region,” IEEE Trans. Microwave Theor. Tech. 58, 3154–3160 (2010).
[Crossref]

S. Itakura, K. Sakai, T. Nagatsuka, E. Ishimura, M. Nakaji, H. Otsuka, K. Mori, Y. Hirano, “High-current backside-illuminated photodiode array module for optical analog links,” J. Lightwave Technol. 28, 965–971 (2010).
[Crossref]

T. Nagatsuka, S. Itakura, K. Sakai, Y. Hirano, “High-power microwave photodiode array for radio over fiber applications,” in Opto-Electronics and Communications Conference (IEEE, 2008), pp. 1–2.

Sato, K.

N. Shimizu, Y. Miyamoto, A. Hirano, K. Sato, T. Ishibashi, “RF saturation mechanism of InP/InGaAs uni-travelling-carrier photodiode,” Electron. Lett. 36, 750–751 (2000).
[Crossref]

T. Nagatsuma, N. Sahri, M. Yaita, T. Ishibashi, N. Shimizu, K. Sato, “All optoelectronic generation and detection of millimeter-wave signals,” in International Topical Meeting on Microwave Photonics (IEEE, 1998), pp. 5–8.

Shimizu, N.

N. Shimizu, Y. Miyamoto, A. Hirano, K. Sato, T. Ishibashi, “RF saturation mechanism of InP/InGaAs uni-travelling-carrier photodiode,” Electron. Lett. 36, 750–751 (2000).
[Crossref]

T. Nagatsuma, N. Sahri, M. Yaita, T. Ishibashi, N. Shimizu, K. Sato, “All optoelectronic generation and detection of millimeter-wave signals,” in International Topical Meeting on Microwave Photonics (IEEE, 1998), pp. 5–8.

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, T. Furuta, “Uni-traveling-carrier photodiodes,” in Ultrafast Electronics and Optoelectronics, M. Nuss, J. Bowers, eds., Vol. 13 of OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

Steffan, A. G.

Sudharsansan, R.

N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T. D. Isshiki, G. S. Kinsey, R. Sudharsansan, “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photon. Technol. Lett. 16, 864–866 (2004).
[Crossref]

Taylor, J. A.

Thompson, A. R.

A. Wootten, A. R. Thompson, “The Atacama large millimeter/submillimeter array,” Proc. IEEE 97, 1463–1471 (2009).
[Crossref]

Tonda-Goldstein, S.

S. Tonda-Goldstein, D. Dolfi, J. Huignard, G. Charlet, J. Chazelas, “Stimulated Brillouin scattering for microwave signal modulation depth increase in optical links,” Electron. Lett. 36, 944–946 (2000).
[Crossref]

Tulchinsky, D. A.

D. A. Tulchinsky, J. B. Boos, D. Park, P. G. Goetz, W. S. Rabinovich, K. J. Williams, “High-current photodetectors as efficient, linear, and high-power RF output stages,” J. Lightwave Technol. 26, 408–416 (2008).
[Crossref]

D. A. Tulchinsky, X. Li, N. Li, S. Demiguel, J. C. Campbell, K. J. Williams, “High-saturation current wide-bandwidth photodetectors,” IEEE J. Sel. Top. Quantum Electron. 10, 702–708 (2004).
[Crossref]

N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T. D. Isshiki, G. S. Kinsey, R. Sudharsansan, “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photon. Technol. Lett. 16, 864–866 (2004).
[Crossref]

U. Gliese, K. Colladay, A. S. Hastings, D. A. Tulchinsky, V. J. Urick, K. J. Williams, “53.5% photodiode RF power conversion efficiency,” in National Fiber Optic Engineers Conference 2010 (Optical Society of America, 2010), paper PDPA7.

Tulchinsky, D. L.

X. Li, S. Demiguel, N. Li, J. C. Campbell, D. L. Tulchinsky, K. J. Williams, “Backside illuminated high saturation current partially depleted absorber photodetecters,” Electron. Lett. 39, 1466–1467 (2003).
[Crossref]

Urick, V. J.

V. J. Urick, F. Bucholtz, J. D. McKinney, P. S. Devgan, A. L. Campillo, J. L. Dexter, K. J. Williams, “Long-haul analog photonics,” J. Lightwave Technol. 29, 1182–1205 (2011).
[Crossref]

U. Gliese, K. Colladay, A. S. Hastings, D. A. Tulchinsky, V. J. Urick, K. J. Williams, “53.5% photodiode RF power conversion efficiency,” in National Fiber Optic Engineers Conference 2010 (Optical Society of America, 2010), paper PDPA7.

Wang, X.

X. Wang, N. Duan, H. Chen, J. C. Campbell, “InGaAs–InP photodiodes with high responsivity and high saturation power,” IEEE Photon. Technol. Lett. 19, 1272–1274 (2007).
[Crossref]

N. Duan, X. Wang, N. Li, H. Liu, J. C. Campbell, “Thermal analysis of high-power InGaAs–InP photodiodes,” IEEE J. Quantum Electron. 42, 1255–1258 (2006).
[Crossref]

Williams, K.

R. Esman, K. Williams, “Wideband efficiency improvement of fiber optic systems by carrier subtraction,” IEEE Photon. Technol. Lett. 7, 218–220 (1995).
[Crossref]

Williams, K. J.

V. J. Urick, F. Bucholtz, J. D. McKinney, P. S. Devgan, A. L. Campillo, J. L. Dexter, K. J. Williams, “Long-haul analog photonics,” J. Lightwave Technol. 29, 1182–1205 (2011).
[Crossref]

D. A. Tulchinsky, J. B. Boos, D. Park, P. G. Goetz, W. S. Rabinovich, K. J. Williams, “High-current photodetectors as efficient, linear, and high-power RF output stages,” J. Lightwave Technol. 26, 408–416 (2008).
[Crossref]

D. A. Tulchinsky, X. Li, N. Li, S. Demiguel, J. C. Campbell, K. J. Williams, “High-saturation current wide-bandwidth photodetectors,” IEEE J. Sel. Top. Quantum Electron. 10, 702–708 (2004).
[Crossref]

N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T. D. Isshiki, G. S. Kinsey, R. Sudharsansan, “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photon. Technol. Lett. 16, 864–866 (2004).
[Crossref]

X. Li, S. Demiguel, N. Li, J. C. Campbell, D. L. Tulchinsky, K. J. Williams, “Backside illuminated high saturation current partially depleted absorber photodetecters,” Electron. Lett. 39, 1466–1467 (2003).
[Crossref]

U. Gliese, K. Colladay, A. S. Hastings, D. A. Tulchinsky, V. J. Urick, K. J. Williams, “53.5% photodiode RF power conversion efficiency,” in National Fiber Optic Engineers Conference 2010 (Optical Society of America, 2010), paper PDPA7.

Wootten, A.

A. Wootten, A. R. Thompson, “The Atacama large millimeter/submillimeter array,” Proc. IEEE 97, 1463–1471 (2009).
[Crossref]

Xie, X.

Yaita, M.

T. Nagatsuma, N. Sahri, M. Yaita, T. Ishibashi, N. Shimizu, K. Sato, “All optoelectronic generation and detection of millimeter-wave signals,” in International Topical Meeting on Microwave Photonics (IEEE, 1998), pp. 5–8.

Yang, F.

Q. Zhou, A. S. Cross, F. Yang, A. Beling, B. M. Foley, P. E. Hopkins, J. C. Campbell, “Balanced InP/InGaAs photodiodes with 1.5-W output power,” IEEE Photon. J. 5, 6800307 (2013).
[Crossref]

Q. Zhou, A. S. Cross, F. Yang, A. Beling, J. C. Campbell, “Development of narrowband modified uni-travelling-carrier photodiodes with high power efficiency,” in Avionics, Fiber-Optics and Photonics Conference (IEEE, 2013), pp. 65–66.

Q. Zhou, A. S. Cross, F. Yang, A. Beling, J. C. Campbell, “High-power high-bandwidth flip-chip bonded modified uni-traveling carrier photodiodes,” in Photonics Conference (IEEE, 2012), pp. 306–307.

Zheng, X.

N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T. D. Isshiki, G. S. Kinsey, R. Sudharsansan, “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photon. Technol. Lett. 16, 864–866 (2004).
[Crossref]

Zhou, Q.

E. Rouvalis, F. N. Baynes, X. Xie, K. Li, Q. Zhou, F. Quinlan, T. M. Fortier, S. A. Diddams, A. G. Steffan, A. Beling, J. C. Campbell, “High-power and high-linearity photodetector modules for microwave photonic applications,” J. Lightwave Technol. 32, 3810–3816 (2014).
[Crossref]

X. Xie, K. Li, Q. Zhou, A. Beling, J. Campbell, “High-gain, low-noise-figure, and high-linearity analog photonic link based on a high-performance photodetector,” J. Lightwave Technol. 32, 3585–3590 (2014).
[Crossref]

A. S. Cross, Q. Zhou, A. Beling, Y. Fu, J. C. Campbell, “High-power flip-chip mounted photodiode array,” Opt. Express 21, 9967–9973 (2013).
[Crossref]

Q. Zhou, A. S. Cross, F. Yang, A. Beling, B. M. Foley, P. E. Hopkins, J. C. Campbell, “Balanced InP/InGaAs photodiodes with 1.5-W output power,” IEEE Photon. J. 5, 6800307 (2013).
[Crossref]

Q. Zhou, A. S. Cross, A. Beling, Y. Fu, Z. W. Lu, J. C. Campbell, “High-power V-band InGaAs/InP photodiodes,” IEEE Photon. Technol. Lett. 25, 907–909 (2013).
[Crossref]

Q. Zhou, A. S. Cross, F. Yang, A. Beling, J. C. Campbell, “High-power high-bandwidth flip-chip bonded modified uni-traveling carrier photodiodes,” in Photonics Conference (IEEE, 2012), pp. 306–307.

Q. Zhou, A. S. Cross, F. Yang, A. Beling, J. C. Campbell, “Development of narrowband modified uni-travelling-carrier photodiodes with high power efficiency,” in Avionics, Fiber-Optics and Photonics Conference (IEEE, 2013), pp. 65–66.

A. Beling, A. S. Cross, Q. Zhou, Y. Fu, J. C. Campbell, “High-power flip-chip balanced photodetector with >40  GHz bandwidth,” in Photonics Conference (IEEE, 2013), pp. 352–353.

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[Crossref]

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[Crossref]

IEEE J. Quantum Electron. (2)

N. Duan, X. Wang, N. Li, H. Liu, J. C. Campbell, “Thermal analysis of high-power InGaAs–InP photodiodes,” IEEE J. Quantum Electron. 42, 1255–1258 (2006).
[Crossref]

Z. Li, H. P. Pan, H. Chen, A. Beling, J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46, 626–632 (2010).
[Crossref]

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[Crossref]

IEEE Photon. J. (1)

Q. Zhou, A. S. Cross, F. Yang, A. Beling, B. M. Foley, P. E. Hopkins, J. C. Campbell, “Balanced InP/InGaAs photodiodes with 1.5-W output power,” IEEE Photon. J. 5, 6800307 (2013).
[Crossref]

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[Crossref]

N. Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A. Tulchinsky, K. J. Williams, T. D. Isshiki, G. S. Kinsey, R. Sudharsansan, “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photon. Technol. Lett. 16, 864–866 (2004).
[Crossref]

Q. Zhou, A. S. Cross, A. Beling, Y. Fu, Z. W. Lu, J. C. Campbell, “High-power V-band InGaAs/InP photodiodes,” IEEE Photon. Technol. Lett. 25, 907–909 (2013).
[Crossref]

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20, 202–204 (2008).
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T. Nagatsuma, N. Sahri, M. Yaita, T. Ishibashi, N. Shimizu, K. Sato, “All optoelectronic generation and detection of millimeter-wave signals,” in International Topical Meeting on Microwave Photonics (IEEE, 1998), pp. 5–8.

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T. Nagatsuka, S. Itakura, K. Sakai, Y. Hirano, “High-power microwave photodiode array for radio over fiber applications,” in Opto-Electronics and Communications Conference (IEEE, 2008), pp. 1–2.

M. Chtioui, A. Enard, D. Carpentier, F. Lelarge, B. Rousseau, M. Achouche, A. Marceaux, A. Renoult, C. Feuillet, M. Queguiner, T. Merlet, “High power UTC photodiodes design and application for analog fiber optic links,” in International Topical Meeting on Microwave Photonics (IEEE, 2009), pp. 1–4.

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A. Beling, A. S. Cross, Q. Zhou, Y. Fu, J. C. Campbell, “High-power flip-chip balanced photodetector with >40  GHz bandwidth,” in Photonics Conference (IEEE, 2013), pp. 352–353.

Q. Zhou, A. S. Cross, F. Yang, A. Beling, J. C. Campbell, “High-power high-bandwidth flip-chip bonded modified uni-traveling carrier photodiodes,” in Photonics Conference (IEEE, 2012), pp. 306–307.

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Figures (6)

Fig. 1.
Fig. 1. (a) Simplified schematic cross-sectional view of a photodiode flip chip bonded on diamond submount. (b) Band diagrams and electrical field distributions of PIN, UTC, and CC-MUTC photodiodes. (c) Photomicrograph of a diamond submount with CPW pads. (d) SEM image of the flip chip bonded device.
Fig. 2.
Fig. 2. (a) Junction temperature of the device at different dissipated powers and at a fixed dissipated power of 1.5 W for (b) back-illuminated photodiode, (c) photodiode flip chip bonded on AlN submount, and (d) photodiode flip chip bonded on diamond submount.
Fig. 3.
Fig. 3. (a) Frequency response for different PD diameters. (b) RF output power versus average photocurrent at different frequencies and reverse bias voltages.
Fig. 4.
Fig. 4. Summary of RF output power versus frequency.
Fig. 5.
Fig. 5. (a) and (b) PCE of the photodiode driven by heterodyne and modulator setup, respectively. Insert of (b) is the relationship between modulation depth and bias point of modulator. (c) Summary of PCE versus average photocurrent.
Fig. 6.
Fig. 6. Experimental setup for the modulation-depth-enhancement technique.

Tables (1)

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Table 1. Epitaxial Layer Structure of CC-MUTC Photodiodes

Equations (2)

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ηω=Prf,ωPPD,bias+Popt(t)=(mω·Iph)2Rload/2mω·Iph2Rload+Iph/r,
mω=2sin(βVdc)J1(βVac)/[1+cos(βVdc)J0(βVac)],

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