Abstract

This paper discusses optimum design strategies for high-efficiency hybrid semiconductor optical amplifiers (SOA). A comprehensive model is presented to determine the width, composition, and number of quantum wells for a hydrophobic bonded SOA with In $_{s-x-y})$ Ga $_{(x)}$ Al $_{(y)}$ As quantum-wells (QW). Optimizing the interfacial bonding layer, III–V wafer stack design, straight hybrid amplifier dimensions and flared amplifier configurations leads to a design for up to 35% wall-plug efficiency at 2 mW input and 10 dB gain. Likewise, optimized dimensions also lead to 15% wall-plug efficiency (WPE) at 0.1 mW input and 10 dB gain. Thermal effects due to the effect of the buried oxide layer (BOX) is presented and methods of improved thermal extraction is discussed.

© 2013 IEEE

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