Abstract

We discuss the design and demonstration of highly efficient 1.55 µm hybrid III-V/Silicon semiconductor optical amplifiers (SOA). The optimized III-V wafer stack consists of Al0.10In0.71Ga0.18As multiple quantum wells (MQW) and Al0.48In0.52As electron stop layers to realize SOAs with high wall-plug efficiency (WPE). We present various designs and experimentally determine WPE values for 2 mW and 0.1 mW input power amplification. The 400 µm long flared SOA achieved the highest WPE value of 12.1% for output power > 10mW and the 400 µm long straight SOA achieved the highest WPE value of 7.3% for output power < 10mW. These are the highest WPE values ever obtained for 1.55 µm SOAs.

© 2015 Optical Society of America

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2015 (1)

W. Metaferia, H. Kataria, S. Yan-Ting, and S. Lourdudoss, “Growth of InP directly on Si by corrugated epitaxial lateral overgrowth,” J. Phys. D Appl. Phys. 48(4), 045102 (2015).
[Crossref]

2014 (4)

M. J. R. Heck and J. E. Bowers, “Energy efficient and energy proportional optical interconnects for multi-core processors: driving the need for on-chip sources,” IEEE J. Sel. Top. Quantum Electron. 20(4), 332–343 (2014).
[Crossref]

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

J. H. Lee, I. Shubin, J. Yao, J. Bickford, Y. Luo, S. Lin, S. S. Djordjevic, H. D. Thacker, J. E. Cunningham, K. Raj, X. Zheng, and A. V. Krishnamoorthy, “High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links,” Opt. Express 22(7), 7678–7685 (2014).
[Crossref] [PubMed]

C. Zhang, S. Srinivasan, Y. Tang, M. J. R. Heck, M. L. Davenport, and J. E. Bowers, “Low threshold and high speed short cavity distributed feedback hybrid silicon lasers,” Opt. Express 22(9), 10202–10209 (2014).
[Crossref] [PubMed]

2013 (5)

2012 (3)

Z. Wang, C. Junesand, W. Metaferia, C. Hu, L. Wosinski, and S. Lourdudoss, “III-Vs on Si for photonic applications-a monolithic approach,” Mater. Sci. Eng., B 177(17), 1551–1557 (2012).
[Crossref]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “Hybrid III-V/si distributed-feedback laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 24(23), 2155–2158 (2012).
[Crossref]

S. Tanaka, S.-H. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology,” Opt. Express 20(27), 28057–28069 (2012).
[Crossref] [PubMed]

2011 (5)

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310-nm hybrid III-V/si fabry-perot laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

M. J. R. Heck, H.-W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, “Hybrid silicon photonics for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(2), 333–346 (2011).
[Crossref]

R. S. Tucker, “Green optical communications-part I: energy limitations in transport,” IEEE J. Sel. Top. Quantum Electron. 17(2), 245–260 (2011).
[Crossref]

R. S. Tucker, “Green optical communications-part II: energy limitations in networks,” IEEE J. Sel. Top. Quantum Electron. 17(2), 261–274 (2011).
[Crossref]

P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
[Crossref]

2008 (1)

D. Liang and J. E. Bowers, “Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate,” J. Vac. Sci. Technol., B 26, 1560–1568 (2008).

2007 (1)

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescent amplifier,” IEEE Photonics Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

2006 (2)

A. W. Fang, H. Park, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, “A continuous-wave hybrid AlGaInAs-silicon evanescent laser,” IEEE Photonics Technol. Lett. 18(10), 1143–1145 (2006).
[Crossref]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref] [PubMed]

2002 (1)

J. Piprek, J. K. White, and A. J. SpringThorpe, “What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?” IEEE J. Quantum Electron. 38(9), 1253–1259 (2002).
[Crossref]

2000 (1)

J. Piprek, P. Abraham, and J. E. Bowers, “Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers,” IEEE J. Quantum Electron. 36(3), 366–374 (2000).
[Crossref]

1999 (1)

H. J. Lee, H. G. Kim, J. Y. Choi, and H. K. Lee, “All-optical clock recovery from NRZ data with simple NRZ-to-PRZ converter based on self-phase modulation of semiconductor optical amplifier,” Electron. Lett. 35(12), 989–990 (1999).
[Crossref]

1996 (3)

T. Durhuus, B. Mikkelsen, C. Joergensen, S. L. Danielsen, and K. E. Stubkjaer, “All-optical wavelength conversion by semiconductor optical amplifiers,” J. Lightwave Technol. 14(6), 942–954 (1996).
[Crossref]

J. P. Donnelly, J. N. Walpole, G. E. Betts, S. H. Groves, J. D. Woodhouse, F. J. O’Donnell, L. J. Missaggia, R. J. Bailey, and A. Napoleone, “High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions,” IEEE Photonics Technol. Lett. 8(11), 1450–1452 (1996).
[Crossref]

J. N. Walpole, J. P. Donnelly, S. H. Groves, L. J. Missaggia, J. D. Woodhouse, R. J. Bailey, and A. Napoleone, “Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power,” IEEE Photonics Technol. Lett. 8(11), 1429–1431 (1996).
[Crossref]

1993 (1)

F. Koyama, K. Y. Liou, A. G. Dentai, T. Tanbunek, and C. A. Burrus, “Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated wave-guide lens for high-power applications,” IEEE Photonics Technol. Lett. 5(8), 916–919 (1993).
[Crossref]

1992 (1)

J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, “High-power strained-layer InGaAs/AlGaAs tapered traveling-wave amplifier,” Appl. Phys. Lett. 61(7), 740–741 (1992).
[Crossref]

1991 (1)

S. L. Chuang, “Efficient band-structure calculations of strained quantum wells,” Phys. Rev. B Condens. Matter 43(12), 9649–9661 (1991).
[Crossref] [PubMed]

Abraham, P.

J. Piprek, P. Abraham, and J. E. Bowers, “Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers,” IEEE J. Quantum Electron. 36(3), 366–374 (2000).
[Crossref]

Accard, A.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
[Crossref]

Asghari, M.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III-V/si external cavity DBR laser for 3-μm SOI waveguides,” in Group IV Photonics Conference (IEEE, 2012), pp. 317–319.
[Crossref]

Baehr-Jones, T.

Bailey, R. J.

J. P. Donnelly, J. N. Walpole, G. E. Betts, S. H. Groves, J. D. Woodhouse, F. J. O’Donnell, L. J. Missaggia, R. J. Bailey, and A. Napoleone, “High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions,” IEEE Photonics Technol. Lett. 8(11), 1450–1452 (1996).
[Crossref]

J. N. Walpole, J. P. Donnelly, S. H. Groves, L. J. Missaggia, J. D. Woodhouse, R. J. Bailey, and A. Napoleone, “Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power,” IEEE Photonics Technol. Lett. 8(11), 1429–1431 (1996).
[Crossref]

J. P. Donnelly, J. N. Walpole, S. H. Groves, R. J. Bailey, L. J. Missaggia, and A. Napoleone, “High-power 1.5-μm InGaAsP/InP lasers with tapered-gain-region,” in 1997 IEEE Conference of Lasers and Electro-Optics Society (IEEE, 1996), pp. 405–406.
[Crossref]

Basak, J.

Bauters, J. F.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Yongbo Tang, and J. E. Bowers, “Hybrid silicon hotonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

Ben Bakir, B.

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J. P. Donnelly, J. N. Walpole, G. E. Betts, S. H. Groves, J. D. Woodhouse, F. J. O’Donnell, L. J. Missaggia, R. J. Bailey, and A. Napoleone, “High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions,” IEEE Photonics Technol. Lett. 8(11), 1450–1452 (1996).
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Bordel, D.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

Bowers, J. E.

M. J. R. Heck and J. E. Bowers, “Energy efficient and energy proportional optical interconnects for multi-core processors: driving the need for on-chip sources,” IEEE J. Sel. Top. Quantum Electron. 20(4), 332–343 (2014).
[Crossref]

C. Zhang, S. Srinivasan, Y. Tang, M. J. R. Heck, M. L. Davenport, and J. E. Bowers, “Low threshold and high speed short cavity distributed feedback hybrid silicon lasers,” Opt. Express 22(9), 10202–10209 (2014).
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M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Yongbo Tang, and J. E. Bowers, “Hybrid silicon hotonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
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M. J. R. Heck, H.-W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, “Hybrid silicon photonics for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(2), 333–346 (2011).
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H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescent amplifier,” IEEE Photonics Technol. Lett. 19(4), 230–232 (2007).
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A. W. Fang, H. Park, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, “A continuous-wave hybrid AlGaInAs-silicon evanescent laser,” IEEE Photonics Technol. Lett. 18(10), 1143–1145 (2006).
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A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
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F. Koyama, K. Y. Liou, A. G. Dentai, T. Tanbunek, and C. A. Burrus, “Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated wave-guide lens for high-power applications,” IEEE Photonics Technol. Lett. 5(8), 916–919 (1993).
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Chen, H.-W.

M. J. R. Heck, H.-W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, “Hybrid silicon photonics for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(2), 333–346 (2011).
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H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescent amplifier,” IEEE Photonics Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

A. W. Fang, H. Park, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, “A continuous-wave hybrid AlGaInAs-silicon evanescent laser,” IEEE Photonics Technol. Lett. 18(10), 1143–1145 (2006).
[Crossref]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
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Cunningham, J. E.

J. H. Lee, I. Shubin, J. Yao, J. Bickford, Y. Luo, S. Lin, S. S. Djordjevic, H. D. Thacker, J. E. Cunningham, K. Raj, X. Zheng, and A. V. Krishnamoorthy, “High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links,” Opt. Express 22(7), 7678–7685 (2014).
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A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III-V/si external cavity DBR laser for 3-μm SOI waveguides,” in Group IV Photonics Conference (IEEE, 2012), pp. 317–319.
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Danielsen, S. L.

T. Durhuus, B. Mikkelsen, C. Joergensen, S. L. Danielsen, and K. E. Stubkjaer, “All-optical wavelength conversion by semiconductor optical amplifiers,” J. Lightwave Technol. 14(6), 942–954 (1996).
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Davenport, M. L.

C. Zhang, S. Srinivasan, Y. Tang, M. J. R. Heck, M. L. Davenport, and J. E. Bowers, “Low threshold and high speed short cavity distributed feedback hybrid silicon lasers,” Opt. Express 22(9), 10202–10209 (2014).
[Crossref] [PubMed]

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Yongbo Tang, and J. E. Bowers, “Hybrid silicon hotonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

de Valicourt, G.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

Delfyett, P. J.

P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
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Dentai, A. G.

F. Koyama, K. Y. Liou, A. G. Dentai, T. Tanbunek, and C. A. Burrus, “Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated wave-guide lens for high-power applications,” IEEE Photonics Technol. Lett. 5(8), 916–919 (1993).
[Crossref]

Descos, A.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

Djordjevic, S. S.

Donnelly, J. P.

P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
[Crossref]

J. P. Donnelly, J. N. Walpole, G. E. Betts, S. H. Groves, J. D. Woodhouse, F. J. O’Donnell, L. J. Missaggia, R. J. Bailey, and A. Napoleone, “High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions,” IEEE Photonics Technol. Lett. 8(11), 1450–1452 (1996).
[Crossref]

J. N. Walpole, J. P. Donnelly, S. H. Groves, L. J. Missaggia, J. D. Woodhouse, R. J. Bailey, and A. Napoleone, “Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power,” IEEE Photonics Technol. Lett. 8(11), 1429–1431 (1996).
[Crossref]

J. P. Donnelly, J. N. Walpole, S. H. Groves, R. J. Bailey, L. J. Missaggia, and A. Napoleone, “High-power 1.5-μm InGaAsP/InP lasers with tapered-gain-region,” in 1997 IEEE Conference of Lasers and Electro-Optics Society (IEEE, 1996), pp. 405–406.
[Crossref]

Doylend, J. K.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Yongbo Tang, and J. E. Bowers, “Hybrid silicon hotonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

Duan, G. H.

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
[Crossref]

Durhuus, T.

T. Durhuus, B. Mikkelsen, C. Joergensen, S. L. Danielsen, and K. E. Stubkjaer, “All-optical wavelength conversion by semiconductor optical amplifiers,” J. Lightwave Technol. 14(6), 942–954 (1996).
[Crossref]

Eason, C.

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
[Crossref]

Fang, A. W.

M. J. R. Heck, H.-W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, “Hybrid silicon photonics for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(2), 333–346 (2011).
[Crossref]

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescent amplifier,” IEEE Photonics Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

A. W. Fang, H. Park, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, “A continuous-wave hybrid AlGaInAs-silicon evanescent laser,” IEEE Photonics Technol. Lett. 18(10), 1143–1145 (2006).
[Crossref]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref] [PubMed]

Fedeli, J. M.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

Feng, D.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III-V/si external cavity DBR laser for 3-μm SOI waveguides,” in Group IV Photonics Conference (IEEE, 2012), pp. 317–319.
[Crossref]

Fong, J.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III-V/si external cavity DBR laser for 3-μm SOI waveguides,” in Group IV Photonics Conference (IEEE, 2012), pp. 317–319.
[Crossref]

Gardes, F. Y.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

Gee, S.

P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
[Crossref]

Girard, N.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
[Crossref]

Gopinath, J. T.

P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
[Crossref]

Gould, M.

Groves, S. H.

J. N. Walpole, J. P. Donnelly, S. H. Groves, L. J. Missaggia, J. D. Woodhouse, R. J. Bailey, and A. Napoleone, “Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power,” IEEE Photonics Technol. Lett. 8(11), 1429–1431 (1996).
[Crossref]

J. P. Donnelly, J. N. Walpole, G. E. Betts, S. H. Groves, J. D. Woodhouse, F. J. O’Donnell, L. J. Missaggia, R. J. Bailey, and A. Napoleone, “High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions,” IEEE Photonics Technol. Lett. 8(11), 1450–1452 (1996).
[Crossref]

J. P. Donnelly, J. N. Walpole, S. H. Groves, R. J. Bailey, L. J. Missaggia, and A. Napoleone, “High-power 1.5-μm InGaAsP/InP lasers with tapered-gain-region,” in 1997 IEEE Conference of Lasers and Electro-Optics Society (IEEE, 1996), pp. 405–406.
[Crossref]

Guan, B.

Guang-Hua, D.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

Heck, J. M.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “Hybrid III-V/si distributed-feedback laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 24(23), 2155–2158 (2012).
[Crossref]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310-nm hybrid III-V/si fabry-perot laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

Heck, M. J. R.

M. J. R. Heck and J. E. Bowers, “Energy efficient and energy proportional optical interconnects for multi-core processors: driving the need for on-chip sources,” IEEE J. Sel. Top. Quantum Electron. 20(4), 332–343 (2014).
[Crossref]

C. Zhang, S. Srinivasan, Y. Tang, M. J. R. Heck, M. L. Davenport, and J. E. Bowers, “Low threshold and high speed short cavity distributed feedback hybrid silicon lasers,” Opt. Express 22(9), 10202–10209 (2014).
[Crossref] [PubMed]

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Yongbo Tang, and J. E. Bowers, “Hybrid silicon hotonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

M. J. R. Heck, H.-W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, “Hybrid silicon photonics for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(2), 333–346 (2011).
[Crossref]

Hochberg, M.

Hu, C.

Z. Wang, C. Junesand, W. Metaferia, C. Hu, L. Wosinski, and S. Lourdudoss, “III-Vs on Si for photonic applications-a monolithic approach,” Mater. Sci. Eng., B 177(17), 1551–1557 (2012).
[Crossref]

Jain, S.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Yongbo Tang, and J. E. Bowers, “Hybrid silicon hotonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

Jany, C.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
[Crossref]

Jeong, S.-H.

Joergensen, C.

T. Durhuus, B. Mikkelsen, C. Joergensen, S. L. Danielsen, and K. E. Stubkjaer, “All-optical wavelength conversion by semiconductor optical amplifiers,” J. Lightwave Technol. 14(6), 942–954 (1996).
[Crossref]

Jones, R.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “Hybrid III-V/si distributed-feedback laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 24(23), 2155–2158 (2012).
[Crossref]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310-nm hybrid III-V/si fabry-perot laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescent amplifier,” IEEE Photonics Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

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Z. Wang, C. Junesand, W. Metaferia, C. Hu, L. Wosinski, and S. Lourdudoss, “III-Vs on Si for photonic applications-a monolithic approach,” Mater. Sci. Eng., B 177(17), 1551–1557 (2012).
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D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
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W. Metaferia, H. Kataria, S. Yan-Ting, and S. Lourdudoss, “Growth of InP directly on Si by corrugated epitaxial lateral overgrowth,” J. Phys. D Appl. Phys. 48(4), 045102 (2015).
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Keyvaninia, S.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

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H. J. Lee, H. G. Kim, J. Y. Choi, and H. K. Lee, “All-optical clock recovery from NRZ data with simple NRZ-to-PRZ converter based on self-phase modulation of semiconductor optical amplifier,” Electron. Lett. 35(12), 989–990 (1999).
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J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, “High-power strained-layer InGaAs/AlGaAs tapered traveling-wave amplifier,” Appl. Phys. Lett. 61(7), 740–741 (1992).
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P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
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M. J. R. Heck, H.-W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, “Hybrid silicon photonics for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(2), 333–346 (2011).
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Kopp, C.

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
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F. Koyama, K. Y. Liou, A. G. Dentai, T. Tanbunek, and C. A. Burrus, “Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated wave-guide lens for high-power applications,” IEEE Photonics Technol. Lett. 5(8), 916–919 (1993).
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J. H. Lee, I. Shubin, J. Yao, J. Bickford, Y. Luo, S. Lin, S. S. Djordjevic, H. D. Thacker, J. E. Cunningham, K. Raj, X. Zheng, and A. V. Krishnamoorthy, “High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links,” Opt. Express 22(7), 7678–7685 (2014).
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Kurczveil, G.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Yongbo Tang, and J. E. Bowers, “Hybrid silicon hotonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
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D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

Le Liepvre, A.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
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Lee, D. C.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III-V/si external cavity DBR laser for 3-μm SOI waveguides,” in Group IV Photonics Conference (IEEE, 2012), pp. 317–319.
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Lee, H. J.

H. J. Lee, H. G. Kim, J. Y. Choi, and H. K. Lee, “All-optical clock recovery from NRZ data with simple NRZ-to-PRZ converter based on self-phase modulation of semiconductor optical amplifier,” Electron. Lett. 35(12), 989–990 (1999).
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Lee, H. K.

H. J. Lee, H. G. Kim, J. Y. Choi, and H. K. Lee, “All-optical clock recovery from NRZ data with simple NRZ-to-PRZ converter based on self-phase modulation of semiconductor optical amplifier,” Electron. Lett. 35(12), 989–990 (1999).
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Lee, J. H.

Lelarge, F.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
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D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
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Lim, A. E.-J.

Lin, S.

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F. Koyama, K. Y. Liou, A. G. Dentai, T. Tanbunek, and C. A. Burrus, “Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated wave-guide lens for high-power applications,” IEEE Photonics Technol. Lett. 5(8), 916–919 (1993).
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Lo, G.-Q.

Loh, W.

P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
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Lourdudoss, S.

W. Metaferia, H. Kataria, S. Yan-Ting, and S. Lourdudoss, “Growth of InP directly on Si by corrugated epitaxial lateral overgrowth,” J. Phys. D Appl. Phys. 48(4), 045102 (2015).
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Z. Wang, C. Junesand, W. Metaferia, C. Hu, L. Wosinski, and S. Lourdudoss, “III-Vs on Si for photonic applications-a monolithic approach,” Mater. Sci. Eng., B 177(17), 1551–1557 (2012).
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Luff, B. J.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III-V/si external cavity DBR laser for 3-μm SOI waveguides,” in Group IV Photonics Conference (IEEE, 2012), pp. 317–319.
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Luo, Y.

Make, D.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
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P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
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D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
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D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

Metaferia, W.

W. Metaferia, H. Kataria, S. Yan-Ting, and S. Lourdudoss, “Growth of InP directly on Si by corrugated epitaxial lateral overgrowth,” J. Phys. D Appl. Phys. 48(4), 045102 (2015).
[Crossref]

Z. Wang, C. Junesand, W. Metaferia, C. Hu, L. Wosinski, and S. Lourdudoss, “III-Vs on Si for photonic applications-a monolithic approach,” Mater. Sci. Eng., B 177(17), 1551–1557 (2012).
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J. P. Donnelly, J. N. Walpole, G. E. Betts, S. H. Groves, J. D. Woodhouse, F. J. O’Donnell, L. J. Missaggia, R. J. Bailey, and A. Napoleone, “High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions,” IEEE Photonics Technol. Lett. 8(11), 1450–1452 (1996).
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J. N. Walpole, J. P. Donnelly, S. H. Groves, L. J. Missaggia, J. D. Woodhouse, R. J. Bailey, and A. Napoleone, “Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power,” IEEE Photonics Technol. Lett. 8(11), 1429–1431 (1996).
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J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, “High-power strained-layer InGaAs/AlGaAs tapered traveling-wave amplifier,” Appl. Phys. Lett. 61(7), 740–741 (1992).
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J. P. Donnelly, J. N. Walpole, S. H. Groves, R. J. Bailey, L. J. Missaggia, and A. Napoleone, “High-power 1.5-μm InGaAsP/InP lasers with tapered-gain-region,” in 1997 IEEE Conference of Lasers and Electro-Optics Society (IEEE, 1996), pp. 405–406.
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Morito, K.

Napoleone, A.

P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
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J. P. Donnelly, J. N. Walpole, G. E. Betts, S. H. Groves, J. D. Woodhouse, F. J. O’Donnell, L. J. Missaggia, R. J. Bailey, and A. Napoleone, “High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions,” IEEE Photonics Technol. Lett. 8(11), 1450–1452 (1996).
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J. N. Walpole, J. P. Donnelly, S. H. Groves, L. J. Missaggia, J. D. Woodhouse, R. J. Bailey, and A. Napoleone, “Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power,” IEEE Photonics Technol. Lett. 8(11), 1429–1431 (1996).
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J. P. Donnelly, J. N. Walpole, S. H. Groves, R. J. Bailey, L. J. Missaggia, and A. Napoleone, “High-power 1.5-μm InGaAsP/InP lasers with tapered-gain-region,” in 1997 IEEE Conference of Lasers and Electro-Optics Society (IEEE, 1996), pp. 405–406.
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Novack, A.

O’Brien, P.

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
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O’Donnell, F. J.

P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
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J. P. Donnelly, J. N. Walpole, G. E. Betts, S. H. Groves, J. D. Woodhouse, F. J. O’Donnell, L. J. Missaggia, R. J. Bailey, and A. Napoleone, “High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions,” IEEE Photonics Technol. Lett. 8(11), 1450–1452 (1996).
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Oakley, D. C.

P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
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Okamoto, K.

Olivier, S.

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
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Paniccia, M. J.

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescent amplifier,” IEEE Photonics Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

A. W. Fang, H. Park, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, “A continuous-wave hybrid AlGaInAs-silicon evanescent laser,” IEEE Photonics Technol. Lett. 18(10), 1143–1145 (2006).
[Crossref]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref] [PubMed]

Park, H.

M. J. R. Heck, H.-W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, “Hybrid silicon photonics for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(2), 333–346 (2011).
[Crossref]

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescent amplifier,” IEEE Photonics Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

A. W. Fang, H. Park, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, “A continuous-wave hybrid AlGaInAs-silicon evanescent laser,” IEEE Photonics Technol. Lett. 18(10), 1143–1145 (2006).
[Crossref]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref] [PubMed]

Pavarelli, N.

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
[Crossref]

Piprek, J.

J. Piprek, J. K. White, and A. J. SpringThorpe, “What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?” IEEE J. Quantum Electron. 38(9), 1253–1259 (2002).
[Crossref]

J. Piprek, P. Abraham, and J. E. Bowers, “Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers,” IEEE J. Quantum Electron. 36(3), 366–374 (2000).
[Crossref]

Plant, J. J.

P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
[Crossref]

Proietti, R.

Qian, W.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III-V/si external cavity DBR laser for 3-μm SOI waveguides,” in Group IV Photonics Conference (IEEE, 2012), pp. 317–319.
[Crossref]

Raj, K.

Reed, G. T.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

Rensing, M.

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
[Crossref]

Ripin, D. J.

P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
[Crossref]

Roelkens, G.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “Hybrid III-V/si distributed-feedback laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 24(23), 2155–2158 (2012).
[Crossref]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310-nm hybrid III-V/si fabry-perot laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

Seddighian, P.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III-V/si external cavity DBR laser for 3-μm SOI waveguides,” in Group IV Photonics Conference (IEEE, 2012), pp. 317–319.
[Crossref]

Sekiguchi, S.

Shafiiha, R.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III-V/si external cavity DBR laser for 3-μm SOI waveguides,” in Group IV Photonics Conference (IEEE, 2012), pp. 317–319.
[Crossref]

Shang, K.

Shubin, I.

SpringThorpe, A. J.

J. Piprek, J. K. White, and A. J. SpringThorpe, “What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?” IEEE J. Quantum Electron. 38(9), 1253–1259 (2002).
[Crossref]

Srinivasan, S.

C. Zhang, S. Srinivasan, Y. Tang, M. J. R. Heck, M. L. Davenport, and J. E. Bowers, “Low threshold and high speed short cavity distributed feedback hybrid silicon lasers,” Opt. Express 22(9), 10202–10209 (2014).
[Crossref] [PubMed]

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Yongbo Tang, and J. E. Bowers, “Hybrid silicon hotonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

Stankovic, S.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “Hybrid III-V/si distributed-feedback laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 24(23), 2155–2158 (2012).
[Crossref]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310-nm hybrid III-V/si fabry-perot laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

Streshinsky, M.

Stubkjaer, K. E.

T. Durhuus, B. Mikkelsen, C. Joergensen, S. L. Danielsen, and K. E. Stubkjaer, “All-optical wavelength conversion by semiconductor optical amplifiers,” J. Lightwave Technol. 14(6), 942–954 (1996).
[Crossref]

Sysak, M. N.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “Hybrid III-V/si distributed-feedback laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 24(23), 2155–2158 (2012).
[Crossref]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310-nm hybrid III-V/si fabry-perot laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

M. J. R. Heck, H.-W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, “Hybrid silicon photonics for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(2), 333–346 (2011).
[Crossref]

Talli, G.

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G. H. Duan, N. Pavarelli, M. Rensing, C. Eason, G. Talli, P. O’Brien, S. Olivier, S. Malhouitre, C. Kopp, C. Jany, and S. Menezo, “Packaged hybrid III-V/silicon SOA,” in 2014 The European Conference on Optical Communication (ECOC) (IEEE, 2014), pp. 1–3.
[Crossref]

Tanaka, S.

Tanaka, Y.

Tanbunek, T.

F. Koyama, K. Y. Liou, A. G. Dentai, T. Tanbunek, and C. A. Burrus, “Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated wave-guide lens for high-power applications,” IEEE Photonics Technol. Lett. 5(8), 916–919 (1993).
[Crossref]

Tang, Y.

Thacker, H. D.

Thomson, D. J.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

Tucker, R. S.

R. S. Tucker, “Green optical communications-part I: energy limitations in transport,” IEEE J. Sel. Top. Quantum Electron. 17(2), 245–260 (2011).
[Crossref]

R. S. Tucker, “Green optical communications-part II: energy limitations in networks,” IEEE J. Sel. Top. Quantum Electron. 17(2), 261–274 (2011).
[Crossref]

Van Thourhout, D.

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “Hybrid III-V/si distributed-feedback laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 24(23), 2155–2158 (2012).
[Crossref]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310-nm hybrid III-V/si fabry-perot laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

Walpole, J. N.

J. P. Donnelly, J. N. Walpole, G. E. Betts, S. H. Groves, J. D. Woodhouse, F. J. O’Donnell, L. J. Missaggia, R. J. Bailey, and A. Napoleone, “High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions,” IEEE Photonics Technol. Lett. 8(11), 1450–1452 (1996).
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J. N. Walpole, J. P. Donnelly, S. H. Groves, L. J. Missaggia, J. D. Woodhouse, R. J. Bailey, and A. Napoleone, “Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power,” IEEE Photonics Technol. Lett. 8(11), 1429–1431 (1996).
[Crossref]

J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, “High-power strained-layer InGaAs/AlGaAs tapered traveling-wave amplifier,” Appl. Phys. Lett. 61(7), 740–741 (1992).
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J. P. Donnelly, J. N. Walpole, S. H. Groves, R. J. Bailey, L. J. Missaggia, and A. Napoleone, “High-power 1.5-μm InGaAsP/InP lasers with tapered-gain-region,” in 1997 IEEE Conference of Lasers and Electro-Optics Society (IEEE, 1996), pp. 405–406.
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Wang, C. A.

J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, “High-power strained-layer InGaAs/AlGaAs tapered traveling-wave amplifier,” Appl. Phys. Lett. 61(7), 740–741 (1992).
[Crossref]

Wang, Z.

Z. Wang, C. Junesand, W. Metaferia, C. Hu, L. Wosinski, and S. Lourdudoss, “III-Vs on Si for photonic applications-a monolithic approach,” Mater. Sci. Eng., B 177(17), 1551–1557 (2012).
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White, J. K.

J. Piprek, J. K. White, and A. J. SpringThorpe, “What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?” IEEE J. Quantum Electron. 38(9), 1253–1259 (2002).
[Crossref]

Woodhouse, J. D.

J. P. Donnelly, J. N. Walpole, G. E. Betts, S. H. Groves, J. D. Woodhouse, F. J. O’Donnell, L. J. Missaggia, R. J. Bailey, and A. Napoleone, “High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions,” IEEE Photonics Technol. Lett. 8(11), 1450–1452 (1996).
[Crossref]

J. N. Walpole, J. P. Donnelly, S. H. Groves, L. J. Missaggia, J. D. Woodhouse, R. J. Bailey, and A. Napoleone, “Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power,” IEEE Photonics Technol. Lett. 8(11), 1429–1431 (1996).
[Crossref]

Wosinski, L.

Z. Wang, C. Junesand, W. Metaferia, C. Hu, L. Wosinski, and S. Lourdudoss, “III-Vs on Si for photonic applications-a monolithic approach,” Mater. Sci. Eng., B 177(17), 1551–1557 (2012).
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Xuan, Z.

Yang, Y.

Yan-Ting, S.

W. Metaferia, H. Kataria, S. Yan-Ting, and S. Lourdudoss, “Growth of InP directly on Si by corrugated epitaxial lateral overgrowth,” J. Phys. D Appl. Phys. 48(4), 045102 (2015).
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Yao, J.

Yin, Y.

Yongbo Tang,

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Yongbo Tang, and J. E. Bowers, “Hybrid silicon hotonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

Yoo, S. J. B.

Yu, R.

Zhang, C.

Zheng, X.

J. H. Lee, I. Shubin, J. Yao, J. Bickford, Y. Luo, S. Lin, S. S. Djordjevic, H. D. Thacker, J. E. Cunningham, K. Raj, X. Zheng, and A. V. Krishnamoorthy, “High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links,” Opt. Express 22(7), 7678–7685 (2014).
[Crossref] [PubMed]

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III-V/si external cavity DBR laser for 3-μm SOI waveguides,” in Group IV Photonics Conference (IEEE, 2012), pp. 317–319.
[Crossref]

Zilkie, A. J.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III-V/si external cavity DBR laser for 3-μm SOI waveguides,” in Group IV Photonics Conference (IEEE, 2012), pp. 317–319.
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Appl. Phys. Lett. (1)

J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, “High-power strained-layer InGaAs/AlGaAs tapered traveling-wave amplifier,” Appl. Phys. Lett. 61(7), 740–741 (1992).
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Electron. Lett. (1)

H. J. Lee, H. G. Kim, J. Y. Choi, and H. K. Lee, “All-optical clock recovery from NRZ data with simple NRZ-to-PRZ converter based on self-phase modulation of semiconductor optical amplifier,” Electron. Lett. 35(12), 989–990 (1999).
[Crossref]

IEEE J. Quantum Electron. (2)

J. Piprek, P. Abraham, and J. E. Bowers, “Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers,” IEEE J. Quantum Electron. 36(3), 366–374 (2000).
[Crossref]

J. Piprek, J. K. White, and A. J. SpringThorpe, “What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?” IEEE J. Quantum Electron. 38(9), 1253–1259 (2002).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (7)

P. W. Juodawlkis, J. J. Plant, W. Loh, L. J. Missaggia, F. J. O’Donnell, D. C. Oakley, A. Napoleone, J. Klamkin, J. T. Gopinath, D. J. Ripin, S. Gee, P. J. Delfyett, and J. P. Donnelly, “High-power, low-noise 1.5-μm slab-coupled optical waveguide (SCOW) emitters: physics, devices, and applications,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1698–1714 (2011).
[Crossref]

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Yongbo Tang, and J. E. Bowers, “Hybrid silicon hotonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

M. J. R. Heck and J. E. Bowers, “Energy efficient and energy proportional optical interconnects for multi-core processors: driving the need for on-chip sources,” IEEE J. Sel. Top. Quantum Electron. 20(4), 332–343 (2014).
[Crossref]

M. J. R. Heck, H.-W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, “Hybrid silicon photonics for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(2), 333–346 (2011).
[Crossref]

R. S. Tucker, “Green optical communications-part I: energy limitations in transport,” IEEE J. Sel. Top. Quantum Electron. 17(2), 245–260 (2011).
[Crossref]

R. S. Tucker, “Green optical communications-part II: energy limitations in networks,” IEEE J. Sel. Top. Quantum Electron. 17(2), 261–274 (2011).
[Crossref]

D. Guang-Hua, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “Hybrid III-V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20, 6100213 (2014).

IEEE Photonics Technol. Lett. (7)

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310-nm hybrid III-V/si fabry-perot laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “Hybrid III-V/si distributed-feedback laser based on adhesive bonding,” IEEE Photonics Technol. Lett. 24(23), 2155–2158 (2012).
[Crossref]

A. W. Fang, H. Park, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, “A continuous-wave hybrid AlGaInAs-silicon evanescent laser,” IEEE Photonics Technol. Lett. 18(10), 1143–1145 (2006).
[Crossref]

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescent amplifier,” IEEE Photonics Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

J. P. Donnelly, J. N. Walpole, G. E. Betts, S. H. Groves, J. D. Woodhouse, F. J. O’Donnell, L. J. Missaggia, R. J. Bailey, and A. Napoleone, “High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions,” IEEE Photonics Technol. Lett. 8(11), 1450–1452 (1996).
[Crossref]

F. Koyama, K. Y. Liou, A. G. Dentai, T. Tanbunek, and C. A. Burrus, “Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated wave-guide lens for high-power applications,” IEEE Photonics Technol. Lett. 5(8), 916–919 (1993).
[Crossref]

J. N. Walpole, J. P. Donnelly, S. H. Groves, L. J. Missaggia, J. D. Woodhouse, R. J. Bailey, and A. Napoleone, “Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power,” IEEE Photonics Technol. Lett. 8(11), 1429–1431 (1996).
[Crossref]

J. Lightwave Technol. (2)

T. Durhuus, B. Mikkelsen, C. Joergensen, S. L. Danielsen, and K. E. Stubkjaer, “All-optical wavelength conversion by semiconductor optical amplifiers,” J. Lightwave Technol. 14(6), 942–954 (1996).
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S. Cheung, Y. Kawakita, K. Shang, and S. J. B. Yoo, “Theory and design optimization of energy-efficient hydrophobic wafer-bonded III-V/si hybrid semiconductor optical amplifiers,” J. Lightwave Technol. 31(24), 4057–4066 (2013).
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J. Phys. D Appl. Phys. (1)

W. Metaferia, H. Kataria, S. Yan-Ting, and S. Lourdudoss, “Growth of InP directly on Si by corrugated epitaxial lateral overgrowth,” J. Phys. D Appl. Phys. 48(4), 045102 (2015).
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J. Vac. Sci. Technol., B (1)

D. Liang and J. E. Bowers, “Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate,” J. Vac. Sci. Technol., B 26, 1560–1568 (2008).

Mater. Sci. Eng., B (1)

Z. Wang, C. Junesand, W. Metaferia, C. Hu, L. Wosinski, and S. Lourdudoss, “III-Vs on Si for photonic applications-a monolithic approach,” Mater. Sci. Eng., B 177(17), 1551–1557 (2012).
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Opt. Express (7)

S. S. Djordjevic, K. Shang, B. Guan, S. T. S. Cheung, L. Liao, J. Basak, H.-F. Liu, and S. J. B. Yoo, “CMOS-compatible, athermal silicon ring modulators clad with titanium dioxide,” Opt. Express 21(12), 13958–13968 (2013).
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A. Novack, M. Gould, Y. Yang, Z. Xuan, M. Streshinsky, Y. Liu, G. Capellini, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “Germanium photodetector with 60 GHz bandwidth using inductive gain peaking,” Opt. Express 21(23), 28387–28393 (2013).
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R. Yu, S. Cheung, Y. Li, K. Okamoto, R. Proietti, Y. Yin, and S. J. B. Yoo, “A scalable silicon photonic chip-scale optical switch for high performance computing systems,” Opt. Express 21(26), 32655–32667 (2013).
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J. H. Lee, I. Shubin, J. Yao, J. Bickford, Y. Luo, S. Lin, S. S. Djordjevic, H. D. Thacker, J. E. Cunningham, K. Raj, X. Zheng, and A. V. Krishnamoorthy, “High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links,” Opt. Express 22(7), 7678–7685 (2014).
[Crossref] [PubMed]

S. Tanaka, S.-H. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology,” Opt. Express 20(27), 28057–28069 (2012).
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Y.-h. Kuo, H. Park, A. W. Fang, J. E. Bowers, R. Jones, M. Paniccia, and O. Cohen, “High speed data amplification using hybrid silicon evanescent amplifier,” in 2007 Conference on Lasers & Electro-Optics/Quantum Electronics and Laser Science Conference (OSA, 2007), paper CTuII1.
[Crossref]

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[Crossref]

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Figures (12)

Fig. 1
Fig. 1 (a) Calculated material gain for a single Al0.102In0.715Ga0.183As QW at T = 25 °C and T = 90 °C and (b) Calculated material gain spectrum for a single Al0.102In0.715Ga0.183As QW at T = 25 °C and T = 90 °C.
Fig. 2
Fig. 2 (a) Cross section and top view of hybrid SOA with III-V taper regions, (b) MQW confinement factor vs. silicon waveguide width, (c) 2-D mode profile indicating high confinement region ΓMQW = 5.1%, and (d) low confinement region.
Fig. 3
Fig. 3 Efficiency map of WPE for straight section hybrid SOA with (a) Pin = 2 mW and 10 dB gain with 3 Al0.250In0.679Ga0.071As MQW (T = 90°C), and (b) Pin = 0.1 mW and 10 dB gain.
Fig. 4
Fig. 4 Fabrication flow for (a) 500nm tall silicon waveguide and VOC layers, (b) Cr/AuZn metal hard mask and III-V mesa definition, (c) N-contact metal lift-off, (d) additional p-contact metal, (e) H + proton implantation at 120keV and 160keV, (f) removing 300nm n-InP layer from passive sections, (g) 1µm SiO2 isolation layer, (h) thick Ti/Au metal probing pads.
Fig. 5
Fig. 5 (a) Nomarski image of fabricated hybrid SOA, (b) Up-close image of III-V taper, and (c) cross-sectional SEM image.
Fig. 6
Fig. 6 (a) Amplifier power vs. current with Pin = 2 mW at T = 20 °C and I-V curve indicating 3.679 Ω series resistance, (b) Wall-plug-efficiency plot of ~7.2% for Pout = 10.11 dBm (SOA length = 400 µm, width = 4µm) WPE (%) = 100x(Pout-Pin)/(IbiasVbias).
Fig. 7
Fig. 7 (a) Measured optical spectrum data for Pin = 2 mW without taking into account 14 dB output coupling loss (SOA length = 400 µm, width = 500nm) (b) close-up of signal gain spectrum (0.06 nm OSA resolution bandwidth).
Fig. 8
Fig. 8 (a) Amplifier power vs. current with Pin = 0.1 mW at T = 20 °C, (b) Wall-plug-efficiency plot of ~0.38% for Pout = −2.43 dBm (SOA length = 400 µm, width = 500nm) WPE (%) = 100 × (Pout-Pin)/(IbiasVbias).
Fig. 9
Fig. 9 (a) Amplifier power vs. current with Pin = 2mW at T = 20 °C and I-V curve for different flared SOAs, (b) Wall-plug-efficiency plot of ~12.1% for Pout = 11.42dBm (SOA length = 400 µm, width = 4µm to 8µm) WPE (%) = 100 × (Pout-Pin)/(IbiasVbias).
Fig. 10
Fig. 10 (a) Measured optical spectrum data for Pin = 2 mW without taking into account 14 dB output coupling loss (SOA length = 400 µm, width = 4µm to 8µm) (b) close-up of signal gain spectrum (0.06 nm OSA resolution bandwidth).
Fig. 11
Fig. 11 (a) Amplifier power vs. current with Pin = 0.1mW at T = 20 °C and I-V curve for different flared SOAs, (b) Wall-plug-efficiency plot of ~0.4% for Pout = −2.5 dBm (SOA length = 400 µm, width = 4µm to 8µm) WPE (%) = 100 × (Pout-Pin)/(IbiasVbias).
Fig. 12
Fig. 12 (a) III-V mesa temperature trade-off between BOX thickness, III-V mesa width and silicon substrate leakage loss. (b) Thermal simulation of the device with a 3 µm thick BOX layer, and (c) with a 1 µm thick BOX layer. Device length = 400 µm, width = 4 µm. Ibias = 100mA, Vbias = 1.5 V [35].

Tables (2)

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Table 1 Brief survey of state-of-the-art SOAs (λ = 1550nm) and WPE values

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Table 2 7 MQW III-V epitaxial wafer stack (nid: non-intentionally doped)

Equations (4)

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( d dt + v g d dz )R( z,t )= v g R( z,t )[ Γg(ω,N,T) α FC N α 0 ]
( d dt + v g d dz )ϕ( z,t )= v g Γ ω c [ Δ n r +Δ n plasma ]Δ n plasma = λ 2 q 2 N 8 π 2 ε 0 n c 2 m 0 ,
dN dt = η i I qV v g g(ω,N,T)R( z,t )ANB N 2 C N 3
P out sat =( G 0 ln2 G 0 2 )( wd Γ )( hν aτ )

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