Abstract
In this study, an analytical model for calculating the nonlinear harmonic/intermodulation distortion
for RF signals in silicon-based electro-optic modulators is investigated by considering the nonlinearity on the
effective index change curve with the operation point and the device structure simultaneously. Distortion expressions
are obtained and theoretical results are presented showing that optimal modulator parameters can be found to linearize
it. Moreover, the harmonic distortion of a 1 mm silicon-based asymmetric MZI is RF characterized and used to
corroborate the theoretical results. Based on the present model, the nonlinear distortion in terms of bias voltage or
operating wavelength is calculated and validated by comparing with the experimental data, showing a good agreement
between measurements and theory. Analog photonic link quality parameter like carrier-to-distortion is one of the
parameters that can be found with that model. Finally, the modulation depth is measured to assure that no
over-modulation is produced.
© 2013 IEEE
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