A novel photodiode (PD) structure with an integrated total-reflection mirror which can enhance the quantum efficiency in back-illuminated geometry is proposed. Due to the diagonal propagation of the reflected light at the total-reflection mirror through the absorption layer, the efficiency is improved by about 50% from that of the normally irradiated case. By employing a unitraveling-carrier structure together with a thick absorption layer of 4700 A, the fabricated PD exhibits a high responsivity of 0.65 A/W, a high 3-dB bandwidth of 50 GHz,and a high-output voltage of 5 V, simultaneously.
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
Login to access OSA Member Subscription