Abstract
Chip-scale integration of optoelectronic devices such as lasers,
waveguides, and modulators on silicon is prevailing as a promising
approach to realize future ultrahigh speed optical interconnects. We
review recent progress of the direct epitaxy and fabrication of quantum
dot (QD) lasers and integrated guided-wave devices on silicon. This
approach involves the development of molecular beam epitaxial growth of
self-organized QD lasers directly on silicon substrates and their
monolithic integration with amorphous silicon waveguides and quantum well
electroabsorption modulators. Additionally, we report a preliminary study
of long-wavelength (>1.3 µm) Q D lasers grown on silicon and
integrated crystalline silicon waveguides using membrane transfer
technology.
© 2008 Chinese Optics Letters
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