Abstract
A new configuration of the confinement structure is utilized to improve optoelectronic performance, including threshold current, ac current gain, optical bandwidth, and optical output power of a single quantum well transistor laser. Considering the drift component in addition to the diffusion term in electron current density, a new continuity equation is developed to analyze the proposed structures. Physical parameters, including electron mobility, recombination lifetime, optical confinement factor, electron capture time, and photon lifetime, are calculated for new structures. Based on solving the continuity equation in separate confinement heterostructures, the threshold current reduces 67%, the optical output power increases 37%, and the −3 dB optical bandwidth increases to 21 GHz (compared to 19.5 GHz in the original structure) when the graded index layers of AlξGa1−ξAs (ξ:0.05→0 in the left side of quantum well, ξ:0→0.02 in the right side of quantum well) are used instead of uniform GaAs in the base region.
© 2017 Chinese Laser Press
PDF Article
More Like This
AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasers
Sergi Cuesta, Yoann Curé, Fabrice Donatini, Lou Denaix, Edith Bellet-Amalric, Catherine Bougerol, Vincent Grenier, Quang-Minh Thai, Gilles Nogues, Stephen T. Purcell, Le Si Dang, and Eva Monroy
Opt. Express 29(9) 13084-13093 (2021)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription