Abstract

A lateral photovoltaic effect (LPE) is discovered in an LaTiO_3+δ film epitaxially grown on a (100) SrTiO₃ substrate. Under the illumination of a continuous 808 nm laser beam that is focused on the LaTiO_3+δ film through the SrTiO₃ substrate, the open-circuit photovoltage depends linearly on the illuminated position. The sensitivity of the LPE can be modified by the bias current. The LaTiO_3+δ film shows a stable photoelectric property under the high pressure, up to 9 MPa. These results indicate that the LaTiO_3+δ films can give rise to a potentially photoelectronic device for near-infrared position-sensitive detection in high-pressure environments.

© 2015 Chinese Laser Press

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