Abstract
Er<sup>3+</sup> ions embedded in silica thin films co-doped by
SnO<sub>2</sub> nanocrystals are fabricated by sol-gel and spin coating methods.
Uniformly distributed 4-nm SnO<sub>2</sub> nanocrystals are fabricated, and the
nanocrystals showed tetragonal rutile crystalline structures confirmed by
transmission electron microscope and X-ray diffraction measurements. A strong
characteristic emission located at 1.54 μm from the Er<sup>3+</sup> ions is
identified, and the influences of Sn doping concentrations on photoluminescence
properties are systematically evaluated. The emission at 1.54 μm from
Er<sup>3+</sup> ions is enhanced by more than three orders of magnitude, which
can be attributed to the effective energy transfer from the defect states of
SnO<sub>2</sub> nanocrystals to nearby Er<sup>3+</sup> ions, as revealed by the
selective excitation experiments.
© 2012 Chinese Optics Letters
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